Lg Display Co., Ltd.

Hyuk Ji

So-Young Noh

Kyeong-Ju Moon

Ki-tae Kim

YoungJang Lee

HyoJin Kim

SoYoung Noh

Ui-Jin Chung

Kye-Chul Choi

Dong-Yup Kim

Jung-Doo Jin

Jin-Kyu Roh

Chan-Ho Kim

Ki-Tae Kim

So-Yeon Je

Jae Hyun Kim

Sun Young Choi

Jin Chae Jeon

Mi Jin Jeong

SoYeon Je

A display apparatus can include a flexible substrate including a penetrating hole, a first thin film transistor including a first semiconductor layer, a second thin film transistor including a second semiconductor layer, and a first planarization layer on the first and second thin film transistors. The display apparatus can include a connection electrode on the first planarization layer electrically connected to the first or second thin film transistor, a second planarization layer on the first planarization layer, a first electrode on the second planarization layer electrically connected to the connection electrode, and a bank layer on the second planarization layer exposing a portion of the first electrode. The display apparatus includes a light-emitting layer on the portion of the first electrode exposed by the bank layer, the light-emitting layer including an emission material layer between first and second organic layers, and a second electrode on the light-emitting layer.

Display apparatus having a substrate hole

A display apparatus includes an oxide semiconductor pattern disposed on a device substrate and including a channel region disposed between a source region and a drain region, a gate electrode overlapping the channel region of the oxide semiconductor pattern and having a structure in which a first hydrogen barrier layer and a gate conductive layer are stacked, and a gate insulating film disposed between the oxide semiconductor pattern and the gate electrode to expose the source region and the drain region of the oxide semiconductor pattern. The gate electrode exposes a portion of the gate insulating film that is adjacent to the source region and a portion of the gate insulating film that is adjacent to the drain region.

Display apparatus

A display apparatus can include a buffer layer on a flexible substrate; a first thin film transistor on the buffer layer including a first semiconductor pattern, a first gate electrode, a first source electrode and a first drain electrode, a second thin film transistor including a second semiconductor pattern, a second gate electrode, a second source electrode and a second drain electrode, and a passivation layer on the first and the second thin film transistors. Also, the display apparatus includes a planarization layer, a light-emitting device including a first electrode, a light-emitting layer and a second electrode on the planarization layer, and an encapsulating element on the light-emitting device. Also, the light-emitting device is electrically connected to the first thin film transistor, the first semiconductor pattern includes silicon, and the second semiconductor pattern includes an oxide semiconductor pattern, and the second gate electrode includes lower and upper electrodes.

Display apparatus having an oxide semiconductor pattern

Provided are a display device and a method for manufacturing the same. The display device includes: a connection source electrode and a connection drain electrode connected to a first source electrode a the first drain electrode, respectively by penetrating an isolation insulating layer and a second interlayer dielectric layer to enhance a characteristic of an element and reliability of the display device.

Display device and method for manufacturing the same

An oxide semiconductor thin film transistor and a method of forming the oxide semiconductor thin film transistor are provided. The oxide semiconductor thin film transistor can include a semiconductor layer including a channel region, a source region and a drain region; a first gate insulating layer on the semiconductor layer; a gate electrode on the first gate insulating layer; a second gate insulating layer on the gate electrode; an auxiliary electrode on the second gate insulating layer; an interlayer insulating layer on the auxiliary electrode; and a source electrode and a drain electrode on the interlayer insulating layer, wherein the source region and the drain region being disposed at both sides of the channel region, wherein the gate electrode overlapping with the channel region, and the auxiliary electrode overlapping with the gate electrode.

Oxide semiconductor thin film transistor and method of forming the same

A display apparatus includes a first TFT in a display area including a first semiconductor pattern including a polysilicon, a first gate electrode overlapping with the first semiconductor pattern under conditions that a first gate insulating layer is interposed, and first source and drain electrodes connected to the first semiconductor pattern, a second TFT in the display area including a second semiconductor pattern including a first oxide semiconductor, a second gate electrode overlapping with the second semiconductor pattern under conditions that second and third gate insulating layers are interposed, second source and drain electrodes connected to the second semiconductor pattern, and a third TFT in a non-display area including a third semiconductor pattern including a second oxide semiconductor, a third gate electrode overlapping with the third semiconductor pattern under conditions that the third gate insulating layer is interposed, and third source and drain electrodes connected to the third semiconductor pattern.

A display apparatus can include a substrate including a display area and a non-display area adjacent to the display area, a first thin film transistor in the display area, and a second thin film transistor in the display area. The first thin film transistor can include a first semiconductor pattern on the substrate, a first gate electrode overlapping the first semiconductor pattern, and a first source electrode and a first drain electrode both connected to the first semiconductor pattern. The second thin film transistor can include a second semiconductor pattern, a second gate electrode overlapping the second semiconductor pattern, a second source electrode connected to the second semiconductor pattern, and a second drain electrode connected to the second semiconductor pattern. The display apparatus can further include a conductive pattern between the display area and the second semiconductor pattern.

A display apparatus is provided. The display apparatus can include a substrate hole penetrating a device substrate, light-emitting devices spaced away from the substrate hole, and at least one separating device between the substrate hole and the light-emitting devices. Each of the light-emitting devices can include a light-emitting layer between a first electrode and a second electrode. The separating device can surround the substrate hole. The separating device can include at least one under-cut structure. The under-cut structure can include a depth and a length, which are larger than a thickness of the light-emitting layer. Thus, in the display apparatus, the damage of the light-emitting devices due to external moisture permeating through the substrate hole can be prevented.

A display apparatus can include a driving circuit on a device substrate, the driving circuit including a first thin film transistor and a second thin film transistor, a first insulating layer on the first thin film transistor and the second thin film transistor of the driving circuit, a second insulating layer on the first insulating layer, and a light-emitting device on the second insulating layer, the light-emitting device being electrically connected to the second thin film transistor of the driving circuit. Each of the first thin film transistor and the second thin film transistor includes an oxide semiconductor pattern and a gate electrode overlapping a portion of the oxide semiconductor pattern. The gate electrode has a stacked structure of a first hydrogen barrier layer and a low-resistance electrode.

The present disclosure provides a display apparatus, a display panel and a method for manufacturing the same. The display panel includes a substrate including a display area including a plurality of sub-pixels, and a gate driving area including a gate driving circuit, a first buffer layer contacting the substrate in the gate driving area, a second thin film transistor disposed in the gate driving area while including a second semiconductor layer made of a second semiconductor, a second buffer layer disposed at a first opening exposing the substrate in the display area while contacting the substrate, and a first thin film transistor disposed at the first opening in the display area while including a first semiconductor layer made of a first semiconductor different from the second semiconductor.

Display apparatus, display panel and method for manufacturing the same

A display apparatus in which a thin film transistor of each pixel region includes an oxide semiconductor pattern is provided. The pixel regions can be disposed on a display area of a device substrate. The display area can be electrically connected to the gate driver by gate lines. An encapsulating element can be disposed on the thin film transistor of each pixel region. The encapsulating element can extend beyond the display area. The gate lines can overlap the encapsulating element. A barrier line can be disposed between the gate lines and the encapsulating element. The barrier line can include a hydrogen barrier material. Thus, in the display apparatus, the characteristics deterioration of the thin film transistor due to the encapsulating element can be prevented or minimized.

A display apparatus in which a thin film transistor includes an oxide semiconductor pattern is disclosed. A gate electrode of the thin film transistor can overlap a channel region of the oxide semiconductor pattern. The gate electrode can have a structure in which a hydrogen barrier layer and a low-resistance electrode layer are stacked. A light-emitting device and an encapsulating element can be sequentially stacked on the thin film transistor. A thickness of the hydrogen barrier layer can be determined by a content of hydrogen per unit area of the encapsulating element. Thus, in the display apparatus, the characteristics deterioration of the thin film transistor due to hydrogen diffused from the encapsulating element can be prevented.

Growing community of inventors

Paju-si, South Korea

Hyuk Ji