Samsung Electronics Co., Ltd.

Other

Hyuk Ho Kwon

Sung Jin Park

Han Vit Yang

Yong Hoon Son

Ji Woon Im

Hyun Seok Lim

Yu Seon Kang

Dong Hyeop Ha

So Yoon Lee

Ji Youn Seo

Byung Sun Park

Sung Soo Ahn

Moon Jong Kang

Tae Yong Eom

Byung Ho Chun

Dae Hun Choi

A deposition apparatus includes an upper shower head and a lower shower head within a process chamber, the upper shower head and the lower shower head facing each other, a support structure between the upper shower head and the lower shower head, the support structure being connected to the lower shower head to support a wafer, and a plasma process region between the wafer supported by the support structure and the lower shower head, wherein the lower shower head includes lower holes to jet a lower gas in a direction of the wafer, wherein the upper shower head includes upper holes to jet an upper gas in a direction of the wafer, and wherein the support structure includes through opening portions to discharge a portion of the lower gas jetted through the lower holes to a space between the support structure and the upper shower head.

Deposition apparatus including upper shower head and lower shower head

A deposition apparatus for depositing a material on a wafer, the apparatus including a lower shower head; an upper shower head disposed on the lower shower head, the upper shower head facing the lower shower head; and a support structure between the upper shower head and the lower shower head, the wafer being supportable by the support structure, wherein the upper shower head includes upper holes for providing an upper gas onto the wafer, the lower shower head includes lower holes for providing a lower gas onto the wafer, the support structure includes a ring body surrounding the wafer; a plurality of ring support shafts between the ring body and the lower shower head; and a plurality of wafer supports extending inwardly from a lower region of the ring body to support the wafer, and the plurality of wafer supports are spaced apart from one another.

A three-dimensional semiconductor device includes: a peripheral circuit structure disposed on a lower substrate, and including an internal peripheral pad portion; an upper substrate disposed on the peripheral circuit structure; a stack structure disposed on the upper substrate, and including gate horizontal patterns; a vertical channel structure passing through the stack structure in a first region on the upper substrate; a first vertical support structure passing through the stack structure in a second region on the upper substrate; and an internal peripheral contact structure passing through the stack structure and the upper substrate, and electrically connected to the internal peripheral pad portion, wherein an upper surface of the first vertical support structure is disposed on a different level from an upper surface of the vertical channel structure, and is coplanar with an upper surface of the internal peripheral contact structure.

Three-dimensional semiconductor device

A pen type device for ultrasound guided fine needle aspiration cytology and biopsy comprises a hollow body having a needle hole, a sliding part slidably mounted inside the body, elastic members mounted inside the body, a syringe having a cylinder mounted, a rotating part disposed inside the sliding part and the body, a head screw-coupled to the rear end of the sliding part and drawn out from the body, and a negative pressure generating part mounted on the body to generate negative pressure to the syringe by pulling a piston of the syringe when a button located on the outer face of the body is pushed.

Pen type device for ultrasound guided fine needle aspiration cytology and biopsy

Growing community of inventors

Hwaseong-si, South Korea

Hyuk Ho Kwon