Samsung Electronics Co., Ltd.

Hyuckjin Kang

Yong Kwan Kim

Sangyeon Han

Jungwoo Song

Kwangmin Kim

Seguen Park

Jun Ho Lee

Provided are a semiconductor memory device and a method of fabricating the same. The semiconductor memory device may include: a first impurity doped region and a second impurity doped region spaced apart from each other in a semiconductor substrate, a bit line electrically connected to the first impurity doped region and crossing over the semiconductor substrate, a storage node contact electrically connected to the second impurity doped region, a first spacer and a second spacer disposed between the bit line and the storage node contact, and an air gap region disposed between the first spacer and the second spacer. The first spacer may cover a sidewall of the bit line, and the second spacer may be adjacent to the storage node contact. A top end of the first spacer may have a height higher than a height of a top end of the second spacer.

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Seoul, South Korea

Hyuckjin Kang