Samsung Electronics Co., Ltd.

Hyuck-Sun Kwon

Dong Gi Lee

Yeong-Jae Woo

Han Bin Yoon

Young-Goo Ko

Dongjin Lee

Kwang-Ho Kim

Taek-Sung Kim

Janghwan Kim

Hwan-Jin Yong

Donghyun Song

Young Kug Moon

Kyoungsub Oh

Byungse So

Byungjin Ahn

Jun Jin Kong

Kwangho Kim

Kyoung Lae Cho

Min-Ho Kim

Kwang Ho Kim

Jong-Soo Seo

Wonmoon Cheon

Wonhee Cho

Dong-Gi Lee

Min-ho Kim

Donggi Lee

Tae-Hwa Yoo

Kwan-Jong Park

Han-Bin Yoon

Yeon Ju Jeong

Jong-gyu Park

Kwanjong Park

Jongsoo Seo

Taehwa Yoo

A user device is provided. The device includes a main power supply, and an auxiliary power supply. The main power supply provides a main power. The auxiliary power supply cuts off the main power according to a power level of the main power supply and provides an auxiliary power upon Sudden Power-Off (SPO).

Auxiliary power supply and user device including the same

A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device; and a controller configured to receive a write command from a host and program write data received from the host to the non-volatile memory device in response to the write command. The controller inserts idle time after receiving the write data from the host and/or after programming the write data to the non-volatile memory device.

Semiconductor storage device and method of throttling performance of the same

A method and apparatus to interface a semiconductor storage device and a host in order to provide performance throttling of the semiconductor storage device. In the method, the semiconductor storage can receive a setting request command from the host. The semiconductor storage device sets a performance throttling parameter to a particular value in response to the setting request command. The semiconductor storage device can send to the host a setting response signal indicating completion of the setting of the performance throttling parameter.

Method and apparatus to interface semiconductor storage device and host to provide performance throttling of semiconductor storage device

A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device configured to store data in a non-volatile state, and a controller configured to control the non-volatile memory device. The controller calculates a new performance level, compares the calculated performance level with a predetermined reference, and determines the calculated performance level as an updated performance level according to the comparison result.

A semiconductor storage device (SSD) and a method of throttling performance of the SSD are provided. The method can include includes gathering at least two workload data items related with to a workload of the semiconductor storage device, estimating the workload using the at least two workload data items, and throttling the performance of the semiconductor storage device according to the estimated workload. Accordingly, a workload that the semiconductor storage device will undergo can be estimated.

A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device, and a controller configured to receive a write command from a host and program and to write data received from the host to the non-volatile memory device in response to the write command. The controller inserts idle time after receiving the write data from the host and/or after programming the write data to the non-volatile memory device.

A non-volatile memory device includes a memory cell array including a plurality of multi-level cells each storing data corresponding to one of a plurality of states of a first group of states, and a control circuit. The control circuit is configured to program data corresponding to one of the plurality of states in a first multi-level cell according to a first verify voltage level of a first group of verify voltage levels, and to control the first multi-level cell to be re-programmed to one of a plurality of states of a second group of states according to a first verify voltage level of a second group of verify voltage levels. Each voltage level of the second group of verify voltage levels has a higher level than the verify voltage levels of the first group of verify voltage levels.

Non-volatile memory device, operation method thereof, and devices having the non-volatile memory device

A storage apparatus includes a memory unit and a controller to set up a memory space of the memory unit as a user data space and a spare space according to a signal representing at least one of the user data space and spare space. An electronic apparatus controls the storage apparatus, and a method controls at least one of the storage apparatus and the electronic apparatus to control a memory space of the storage apparatus.

Defining and changing spare space and user space in a storage apparatus

Growing community of inventors

Seoul, South Korea

Hyuck-Sun Kwon