Samsung Electronics Co., Ltd.

Hyuck Shin

Sang-Young Kim

Sungho Jang

Ho-Jeong Moon

Kyung-Soo Rho

Sun-Nyeong Jung

Sungyeol Kim

In Ho Choi

Sung Ho Jang

In Jae Lee

Injae Lee

Keunhee Bai

Yoonjae Kim

Kul Inn

Donghyub Lee

Jeong-Gil Kim

Min Seok Choi

A method of manufacturing a semiconductor includes generating plasma in an amplifying tube using gas as a gain medium; detecting a state of the plasma generated in the amplifying tube; determining a virtual laser gain based on the detected state of the plasma; controlling the state of the plasma such that the virtual laser gain is within a target range; and manufacturing the semiconductor device including performing an exposure process on a substrate using a laser beam output from the amplifying tube adjusted to have the virtual laser gain within the target range.

Method of exposure using extreme ultraviolet and method of manufacturing a semiconductor device using the same

An X-ray source is disposed and a detector is disposed adjacent to the X-ray source. A test specimen holder is disposed between the X-ray source and the detector. A filter is disposed between the X-ray source and the test specimen holder. The filter has a plate-shaped semiconductor, a granular semiconductor, or a combination thereof.

X-ray system, semiconductor package, and tray having X-ray absorption filter

An extreme ultraviolet generation apparatus is provided. The extreme ultraviolet generation apparatus includes a chamber, a droplet generator configured to provide a droplet into the chamber, a shroud which extends along a movement path of the droplet inside the chamber and surrounds the movement path of the droplet, a charging unit configured to charge the droplet, a monitoring unit configured to measure a position of the charged droplet, an alignment unit including at least one electromagnet, the alignment unit configured to correct the position of the charged droplet within the shroud using the at least one electromagnet, and an acceleration unit configured to accelerate the charged droplet after the position of the charged droplet has been corrected.

Extreme ultraviolet generation apparatus

An extreme ultraviolet exposure system includes an exposure chamber having an internal space, upper and lower electrostatic chucks, a power supply, a light source, and a mask. The upper electrostatic chuck includes first and second electrodes that are adjacent to one another and that generate an electric field of different polarities, respectively, to provide an electrostatic force. The mask is attachable to the lower surface of the upper electrostatic chuck by the electrostatic force. The mask has a metal thin film pattern including a first region in which a metal thin film that shields the electric field, and a second region in which the metal thin film is not disposed and through which the electric field is transmitted. When the mask is attached, the electric field transmitted through the second region applies an attractive force or a repulsive force to charged particles in the exposure chamber.

Extreme ultraviolet exposure system

Growing community of inventors

Bucheon-si, South Korea

Hyuck Shin