Skhynix Inc.

Other

Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Hyuck Sang Yim

Dong Keun Kim

Masahiro Takahashi

Myung Sun Song

Tsuneo Inaba

Katsuyuki Fujita

Akira Katayama

Ki Won Lee

Ji Wang Lee

Byoung Chan Oh

Seoung Ju Chung

A resistive memory device may include a plurality of MATs, row control blocks, a plurality of word lines, a plurality of bit lines and memory cells. Each of the row control blocks may be interposed between the MATs. Each of the row control blocks may include a control element. The word lines may be arranged spaced apart from each other by a substantially uniform gap on the MATs. The bit lines may overlap with the word lines. The memory cells may be located between the word lines and the bit lines. Each of the word lines may be electrically connected with the control element of each of the row control blocks via a connection path.

Resistive memory device and method of manufacturing the resistive memory device

A semiconductor system includes a first set of at least one semiconductor device, and a second set of at least one semiconductor device. The semiconductor system includes a control block for receiving an external address and providing the first and second sets of semiconductor devices with an internal address. The control block provides a semiconductor device from the first set with a first internal address corresponding to the external address, and the control block provides a semiconductor device from the second set with a second internal address that does not correspond to the external address.

Semiconductor system, semiconductor chip, and semiconductor memory system including the semiconductor system

According to one embodiment, a semiconductor memory device comprises a first bank and a second bank. Each of the first bank and the second bank comprises a memory cell having a variable resistor element, a reference cell, a sense amplifier having a first input terminal electrically coupled to the memory cell and a second input terminal electrically coupled to the reference cell, and a first transistor electrically coupling the memory cell and the first input terminal of the sense amplifier. A gate of the first transistor of the first hank and a gate of the first transistor of the second bank are independently supplied with a voltage.

Semiconductor memory device

According to one embodiment, a memory includes a memory cell array including blocks arranged in a column direction, first and second main global conductive lines each extending from a first end to a second end of the memory cell array in the column direction, a first resistance change element connected between the first and second main global conductive lines inside the memory cell array, a first reference global conductive line extending from the first end to the second end of the memory cell array in the column direction, and a second resistance change element connected to the reference global conductive line outside the memory cell array.

Resistance change memory

According to one embodiment, a resistance change memory includes the following configuration. A first inverter includes first input and first output terminals and first and second voltage terminals. A second inverter includes second input and second output terminals and third and fourth voltage terminals. The second input terminal is connected to the first output terminal. The second output terminal is connected to the first input terminal. First and second transistors are connected to the first and second output terminals, respectively. Third and fourth transistors are connected to the first and third voltage terminals, respectively. A fifth transistor is connected between the first voltage terminal and the first memory cell. A sixth transistor is connected to the third voltage terminal. A controller turns on the first and second transistors, after turning off the fifth and sixth transistors.

Growing community of inventors

Seoul, South Korea

Hyuck Sang Yim