Korea Electronics Technology Institute

Hyuck Ki Hong

Woo Kyeong Seong

Suk Won Jung

Young Chang Jo

Min Ho Lee

Jae Gi Son

Kook Nyung Lee

Ki Man Jeon

Yeon Shik Choi

Yun Jae Won

Disclosed is a sensor for measuring skin conductivity and a method of manufacturing the same, wherein the sensor includes: a base board made of a flexible material; an electrode provided on a surface of the base board, and transmitting an electrical signal; and an uneven structure provided on the electrode, and configured to increase an electrical contact area with skin via sweat secreted onto a surface of skin.

Sensors for measuring skin conductivity and methods for manufacturing the same

Disclosed is an image sensor using a nanowire, including a substrate, a photodetector for sensing incident light to produce photocurrent, the magnitude of which varies depending on the intensity of incident light, a signal processing module for outputting photodetection current including information about the presence or absence of incident light and the intensity of incident light based on the presence or absence of photocurrent and the magnitude thereof, and an electrode configured to electrically connect the photodetector and the signal processing module to each other and formed on the photodetector and the signal processing module, wherein the photodetector and the signal processing module are formed on the substrate, and the photodetector is formed of at least one silicon nanowire.

Image sensor using nanowire and method of manufacturing the same

Disclosed is an avalanche photodiode using a silicon nanowire, including a first silicon nanowire formed of silicon (Si), a first conductive region formed by doping one surface of the first silicon nanowire with a first dopant, and a second conductive region formed by doping one surface of the first silicon nanowire with a second dopant having a conductive type different from that of the first dopant so as to be arranged continuously in a longitudinal direction from the first conductive region, wherein, when the magnitude of a reverse voltage applied to both ends of the first silicon nanowire is equal to or greater than a preset breakdown voltage, avalanche multiplication of inner current occurs due to the incidence of light from the outside.

Avalanche photodiode using silicon nanowire and silicon nanowire photomultiplier using the same

Growing community of inventors

Uijeongbu-si, South Korea

Hyuck Ki Hong