Samsung Electronics Co., Ltd.

Hyuck-Jin Kang

Min-Chul Kim

Byung-yoon Kim

Tai-heui Cho

Kang-yoon Lee

Chang-Suk Hyun

Gwang-Seon Byun

Tai-Heui Cho

Sun-Joon Kim

Il-Young Moon

Kwang-bo Sim

Sang-Kil Jeon

Heui-Won Shin

In a fuse region of a semiconductor device, and a method of fabricating the same, the fuse region includes an interlayer insulating layer on a semiconductor substrate, a plurality of fuses on the interlayer insulating layer disposed in parallel with each other, a blocking layer on the interlayer insulating layer between each of the plurality of fuses and in parallel with the plurality of fuses, and a plurality of fuse grooves recessed into the interlayer insulating layer between each of the plurality of fuses and the blocking layer.

Fuse region of a semiconductor region

Integrated circuit devices are provided including an integrated circuit substrate and first through fourth spaced apart lower interconnects on the integrated circuit substrate. The third and fourth spaced apart lower interconnects are parallel to the first and second lower interconnects. A first fuse is provided on the first and second lower interconnects between the first and second lower interconnects and is electrically coupled to the first and second lower interconnects. A second fuse is provided spaced apart from the first fuse and on the third and fourth lower interconnects. The second fuse is between the third and fourth lower interconnects and is electrically coupled to the third and fourth lower interconnects. Related methods of fabricating integrated circuit devices are also provided.

Integrated circuit devices having corrosion resistant fuse regions and methods of fabricating the same

A bonding pad structure in an integrated circuit (IC) and a method for manufacturing thereof comprises a plurality of dummy patterns deposited in sub-layers of the IC, each dummy pattern being connected via a metal link to a plurality of complementary top surface bonding pads, wherein the dummy patterns and the metal link are constructed during the same process steps used to construct the circuit elements included in the IC, without additional or special process steps. Such an imbedded and anchored bonding pad provides contact reliability for both conductive and non-conductive pads used for the interconnection of integrated circuits in a manner that resists layer separation or de-lamination under pulling stresses that are present on the bonding pads.

Bonding pad structure of a semiconductor device

Bonding pad structure of a semiconductor device and method for manufacturing the same

Growing community of inventors

Seoul, South Korea

Hyuck-Jin Kang