Viavi Solutions Inc.

Samsung Display Co., Ltd.

Chung Ang University Industry Academic Cooperation

Hyuck-In Kwon

Tae Young Kim

Dae-Hwan Kim

Jong-Min Kim

Jong Woo Park

Jae-Gab Lee

Wei Chen

Jin-Ook Kim

Nick Ghaemi

Yoo-Chul Shin

Hee-Joong Kim

Sae-Young Hong

Young-Kill Kim

A test device for performing a bling scan includes a digital blind scan circuit. The blind scan circuit includes digital detectors for multiple cellular technologies that simultaneously perform correlation in a baseband frequency range to detect whether received RF signals include a channel of the technologies. The test device launches, responsive to detecting a channel from the blind scan, a signal analysis or a spectrum analysis application for the channel according to a carrier frequency and a technology identified for the channel by the blind scan.

Blind scan for multi-carriers and multi-technologies and seamless signal analysis

A test device may be a portable test device that can perform over the air measurements to determine synchronization errors between clusters in a cellular network. The test device can generate a graphical user interface that can show a map of the boundary area between clusters, locations of base stations hi the boundary area, locations where over the air measurements were taken by the test device, an indication of whether cells are in synchronization for each measurement location, and a table of actual measurements and derived parameters pertaining to cell phase synchronization, interference and other performance metrics.

Test device for measuring synchronization errors between clusters in a cellular network

A vertical stack transistor includes: a first transistor and a second transistor, located in a vertical direction, wherein the first transistor includes a first gate electrode, a first insulating layer, a first electrode, a first channel, and a second electrode, which are sequentially stacked in the vertical direction, and the second transistor includes a second gate electrode, a second insulating layer, a third electrode, a second channel, and a fourth electrode, which are sequentially stacked in the vertical direction, wherein the second gate electrode and the second electrode are the same electrode.

Vertical stack transistor, a display device including the vertical stack transistor, and a manufacturing method of the display device

Growing community of inventors

Seoul, South Korea

Hyuck-In Kwon