Asm IP Holding B.v.

HyounMo Choi

SeokJae Oh

HeeSung Kang

YoungJae Kim

Shinya Ueda

WanGyu Lim

JaeOk Ko

JaeBin Ahn

Wangyu Lim

HyunGyu Jang

A method and system for forming a film on a substrate are disclosed. Exemplary methods include using a first plasma condition to form a layer of deposited material having a good film thickness uniformity, using a second plasma condition to treat the deposited material and thereby form treated material, and using a third plasma condition to form a surface-modified layer—e.g., reactive sites on the treated material.

Thin-film deposition method and system

Provided is a substrate processing method capable of filling a film in a gap structure without forming voids or seams in a gap, the substrate processing method including: a first step of forming a thin film on a structure including a gap by performing a first cycle including supplying a first reaction gas and supplying a second reaction gas to the structure a plurality of times; a second step of etching a portion of the thin film by supplying a fluorine-containing gas onto the thin film; a third step of supplying a hydrogen-containing gas onto the thin film; a fourth step of supplying an inhibiting gas to an upper portion of the gap; and a fifth step of forming a thin film by performing a second cycle including supplying the first reaction gas and supplying a second reaction gas onto the thin film a plurality of times.

Substrate processing method

Growing community of inventors

Hwaseong-si, South Korea

HyounMo Choi