Samsung Electronics Co., Ltd.

Sungkyunkwan University

Research & Business Foundation Sungyunkwan University

Hyoungsub Kim

Wonsik Ahn

Hyeonjin Shin

Kyung-Eun Byun

Taejin Park

Hoijoon Kim

Mirine Leem

Yeonchoo Cho

Yoosang Hwang

Seongjun Park

Jiyoung Kim

Dong Jin Lee

Jaehoon Jang

Daeik Kim

Kang-Uk Kim

Siyoung Choi

Hyangsook Lee

Sungho Jang

Kyung-Eun Kim

Seongjun Jeong

Eunha Lee

Hyena Kwak

Nakjin Son

Kinam Kim

Jaehyun Yang

Jihye Hwang

Hoojeong Lee

Yongjik Park

Provided are a metal chalcogenide thin film and a method and device for manufacturing the same. The metal chalcogenide thin film includes a transition metal element and a chalcogen element, and at least one of the transition metal element and the chalcogen element having a composition gradient along the surface of the metal chalcogenide thin film, the composition gradient being an in-plane composition gradient. The metal chalcogenide thin film may be prepared by using a manufacturing method including providing a transition metal precursor and a chalcogen precursor on a substrate by using a confined reaction space in such a manner that at least one of the transition metal precursor and the chalcogen precursor forms a concentration gradient according to a position on the surface of the substrate; and heat-treating the substrate.

Metal chalcogenide film and method and device for manufacturing the same

Provided are a method of growing a two-dimensional transition metal chalcogenide (TMC) film and a method of manufacturing a device including the two-dimensional TMC film. The method of growing a two-dimensional TMC film includes placing a metal layer having a predetermined pattern on a surface of a substrate; separately supplying a chalcogen precursor to a reaction chamber provided with the substrate; supplying a transition metal precursor to the reaction chamber; and evacuating the chalcogen precursor, the transition metal precursor, and by-products generated therefrom from the reaction chamber, wherein an amount of the chalcogen precursor and an amount of the transition metal precursor supplied to the reaction chamber may be controlled.

Method of growing two-dimensional transition metal chalcogenide film and method of manufacturing device including the same

A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.

Method of forming transition metal dichalcogenide thin film

An optoelectronic device is disclosed. The disclosed optoelectronic device includes an oxide semiconductor layer and a semiconducting two-dimensional (2D) material layer forming a stack structure with the oxide semiconductor layer.

Optoelectronic device

A semiconductor device may include a substrate having a first region and a second region on a surface thereof, and a first semiconductor fin on the first region of the substrate with the first semiconductor fin including a first trench therethrough. A first gate electrode may be provided in the first trench, and first and second source/drain regions may be provided in the first semiconductor fin, with the first gate electrode between the first and second source/drain regions. A second semiconductor fin may be provided on the second region of the substrate with the second semiconductor fin including a second trench therethrough, a second gate electrode may be provided in the second trench, and third and fourth source/drain regions may be provided in the second semiconductor fin with the second gate electrode being between the third and fourth source/drain regions.

Semiconductor device and method of fabricating the same

Nonvolatile memory devices include an electrically insulating layer on a semiconductor substrate and a NAND-type string of nonvolatile memory cells on an upper surface of the electrically insulating layer. The NAND-type string of nonvolatile memory cells includes a plurality of vertically-stacked nonvolatile memory cell sub-strings disposed at side-by-side locations on the electrically insulating layer. A string selection transistor is provided, which includes a gate electrode extending between the electrically insulating layer and the semiconductor substrate and source and drain regions in the semiconductor substrate. A ground selection transistor is provided, which includes a gate electrode extending between the electrically insulating layer and the semiconductor substrate and source and drain regions in the semiconductor substrate.

Three-dimensional non-volatile memory devices having highly integrated string selection and sense amplifier circuits therein

Growing community of inventors

Seoul, South Korea

Hyoungsub Kim