Samsung Electronics Co., Ltd.

Hyoungsoo Ko

Jung Bin Yun

Kwang-Min Lee

Sungsoo Choi

Taechan Kim

Sungchul Kim

Jae Sung Shin

Minseok Oh

Wonjoo Kim

Provided is an image sensor including a semiconductor substrate having a trench and having a first conductivity type, a photoelectric conversion layer formed in the semiconductor substrate below the trench to have a second conductivity type, first and second transfer gate electrodes provided in the trench covered with a gate insulating layer, a first charge-detection layer formed in the semiconductor substrate adjacent to the first transfer gate electrode, and a second charge-detection layer formed in the semiconductor substrate adjacent to the second transfer gate electrode.

Image sensors having transfer gate electrodes in trench

CMOS image sensors are provided. A CMOS image sensor may include a semiconductor substrate including a light-receiving region and a logic region adjacent the light-receiving region. The CMOS image sensor may include a photoelectric conversion region in the light-receiving region. Moreover, the CMOS image sensor may include an isolation region including an interface with a sidewall of the photoelectric conversion region. The isolation region may include a first refractive index that is smaller than a second refractive index of the semiconductor substrate, and the isolation region may be between the logic region and the sidewall of the photoelectric conversion region.

CMOS image sensors including an isolation region adjacent a light-receiving region

Growing community of inventors

Hwaseong-si, South Korea

Hyoungsoo Ko