Samsung Electronics Co., Ltd.

Sungkyunkwan University

Hyoung Sub Kim

Tae Jin Park

Jin Bum Kim

Seung Hun Lee

Jin Yong Kim

Kwan Heum Lee

Munhyeon Kim

Sung Man Whang

Chang Woo Noh

Si Hyung Lee

Hong Bae Park

Seong Heum Choi

Maria Toledano Lu Que

A semiconductor device includes a substrate, a gate electrode on the substrate, a gate spacer on a sidewall of the gate electrode, an active pattern penetrating the gate electrode and the gate spacer, and an epitaxial pattern contacting the active pattern and the gate spacer. The gate electrode extends in a first direction. The gate spacer includes a semiconductor material layer. The active pattern extends in a second direction crossing the first direction.

Semiconductor device including non-sacrificial gate spacers and method of fabricating the same

A semiconductor device includes a gate electrode extending in a first direction on a substrate, a first active pattern extending in a second direction intersecting the first direction on the substrate to penetrate the gate electrode, the first active pattern including germanium, an epitaxial pattern on a side wall of the gate electrode, a first semiconductor oxide layer between the first active pattern and the gate electrode, and including a first semiconductor material, and a second semiconductor oxide layer between the gate electrode and the epitaxial pattern, and including a second semiconductor material. A concentration of germanium of the first semiconductor material may be less than a concentration of germanium of the first active pattern, and the concentration of germanium of the first semiconductor material may be different from a concentration of germanium of the second semiconductor material.

Semiconductor device having germanium containing active pattern and method for fabricating the same

Growing community of inventors

Seoul, South Korea

Hyoung Sub Kim