Samsung Electro-Mechanics Co., Ltd.

Samsung Led Co., Ltd.

Samsung Electronics Co., Ltd.

Hyoun Soo Shin

Hyun Kyung Kim

Hyuk Min Lee

Dong Joon Kim

Dong Woo Kim

Su Yeol Lee

Yong Chun Kim

Jae Joon Yoon

Tae Jun Kim

Sung Soo Park

In Joon Pyeon

Hyun Ju Park

Chang Wan Kim

A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 &#x3bc;m; and an n-electrode pad formed on the n-type nitride semiconductor layer.

Nitride-based semiconductor light emitting diode

There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Nitride semiconductor light emitting device and method of manufacturing the same

Nitride-based semiconductor light emitting diode and method of manufacturing the same

Light-emitting diode

A nitride-based semiconductor LED which is flip-chip bonded on a lead pattern of a sub-mount through a bump ball comprises a substrate; a light-emitting structure formed on the substrate; an electrode formed on the light-emitting structure; a protective film formed on the resulting structure having the electrode formed therein, the protective film exposing the electrode surface corresponding to a portion which is connected to the lead pattern of the sub-mount through a bump ball; and a grid-shape buffer film formed on the electrode surface exposed through the protective film.

Disclosed herein are a flip chip type nitride semiconductor light emitting device, which comprises a substrate for growing a nitride semiconductor material, an n-type nitride semiconductor layer formed on the substrate, an active layer formed on at least a part of the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, a bonding force providing layer formed on the p-type nitride semiconductor layer and adapted to provide a bonding force relative to the p-type nitride semiconductor layer, a reflective electrode layer formed on the bonding force providing layer, and adapted to reflect light produced in the active layer toward the substrate and to diffuse electric current, and a cap layer formed on the reflective electrode layer, and adapted to provide a bonding force between the reflective electrode layer and a bonding metal and to reduce contact resistance.

Flip chip type nitride semiconductor light emitting device and manufacturing method thereof

A GaN light emitting diode for flip-chip bonding, with sufficient bonding area, optimized electrode arrangement, and improved brightness and reliability, includes n-electrodes and a p-electrode which are formed as stripes. The n-electrodes are positioned at equal distances from the p-electrode and arranged in parallel, thus the electric current is not concentrated into a predetermined portion, but uniformly flows through the light emitting diode without reducing a light emitting area.

GaN LED for flip-chip bonding and method of fabricating the same

Growing community of inventors

Seoul, South Korea

Hyoun Soo Shin