Samsung Electronics Co., Ltd.

Hyoun-min Baek

Ki-Hong Kim

Jung-Ho Park

Tae-Seok Oh

Won-je Park

Duk-Min Yi

Jeong-Hoon Bae

An image sensor includes a photoelectric conversion section in a semiconductor substrate, the photoelectric conversion section having a capping layer of a first conductivity type and a photodiode of a second conductivity type below the capping layer, the photodiode having an upper surface deeper than about 1 &#x3bc;m, as measured from an upper surface of the semiconductor substrate, a charge detection section receiving charges stored in the photoelectric conversion through a charge transfer section and converting the received charges into respective electrical signals, a voltage application section adapted to apply voltage to the capping layer and to a lower portion of the semiconductor substrate to control a width of a depletion layer on the photodiode, and a signal operation section adapted to generate red, green, and blue, signals according to signals from the charge detection section.

Image sensor, method of manufacturing the same, and method of operating the same

Disclosed are a complementary metal oxide semiconductor (CMOS) image sensor and a method of forming the same. The CMOS image sensor comprises a semiconductor substrate having a photodiode region and a transistor region. An optical path is formed between a micro lens on the photodiode region and a photodiode formed on the semiconductor substrate. The optical path comprises an inner lens formed between an intermetal insulation layer on the photodiode region and a transparent optical region formed on the inner lens. The transparent optical region generally has a different refractive index from the inner lens.

CMOS image sensor and method of manufacturing same

Growing community of inventors

Yongin-si, South Korea

Hyoun-min Baek