Samsung Electronics Co., Ltd.

Lg Display Co., Ltd.

Hyosub Kim

Yoosang Hwang

Keunnam Kim

Chansic Yoon

Kiseok Lee

Sunghee Han

Dongoh Kim

Bongsoo Kim

Hyeonok Jung

Euna Kim

Sohyun Park

Junhyeok Ahn

Soojeong Kim

Chulkwon Park

Seungbae Jeon

Manbok Kim

Jongmin Kim

YoungDae Kim

Gihyun Yi

Gahui Kang

Provided is a semiconductor device including a substrate including a cell array area and a peripheral circuit area and including a plurality of first active areas defined in the cell array area and at least one second active area defined in the peripheral circuit area; a plurality of bit lines arranged in the cell array area of the substrate and extending in a first direction; a plurality of cell pad structures arranged between the bit lines and each including a first conductive layer, a first intermediate layer, and a first metal layer that are sequentially arranged on a top surface of the first active area; and a peripheral circuit gate electrode disposed on the peripheral circuit area of the substrate and including a second conductive layer, a second intermediate layer, and a second metal layer sequentially arranged on the at least one second active area.

Semiconductor device and methods of manufacturing the same

Semiconductor devices may include an active pattern, a gate structure in an upper portion of the active pattern, a bit line structure on the active pattern, a lower spacer structure on a lower portion of a sidewall of the bit line structure, and an upper spacer structure on an upper portion of the sidewall of the bit line structure. The lower spacer structure includes first and second lower spacers sequentially stacked, the first lower spacer contacts the lower portion of the sidewall of the bit line structure and does not include nitrogen, and the second lower spacer includes a material different from the first lower spacer. A portion of the upper spacer structure contacting the upper portion of the sidewall of the bit line structure includes a material different from the first lower spacer.

Semiconductor devices

Provided is a semiconductor device including a conductive contact plug on a substrate, the conductive contact plug including a lower portion and an upper portion on the lower portion, the lower portion having a first width, and the upper portion having a second width less than the first width, a bit line structure on the conductive contact plug, the bit line structure including a conductive structure and an insulation structure provided in a vertical direction perpendicular to an upper surface of the substrate, and a first lower spacer, a second lower spacer, and a third lower spacer sequentially provided on a sidewall of the lower portion of the conductive contact plug in a horizontal direction parallel to the upper surface of the substrate, wherein an uppermost surface of the third lower spacer is higher than an upper surface of the first lower spacer and an upper surface of the second lower spacer.

A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.

Semiconductor and manufacturing method of the same

Semiconductor device and manufacturing method of the same

A backlight unit includes a bottom cover; a plurality of light sources on the bottom cover; a first support side at an area directly along a first edge of the bottom cover adjacent to a corner of the bottom cover; and a second support side directly adjacent to the first support side and along the first edge of the bottom cover. The first support side includes a first vertical portion, and a first inclined portion connected to a top of the first vertical portion. The second support side includes a second vertical portion, and a second inclined portion connected to a top of the second vertical portion.

Backlight unit and liquid crystal display device including the same

Growing community of inventors

Seoul, South Korea

Hyosub Kim