Samsung Electronics Co., Ltd.

Cornell University

Hyosik Mun

Jooho Lee

Younggeun Park

Seungwoo Jang

Jeongil Bang

Eunsun Kim

Kyuho Cho

Yongsung Kim

Woojin Lee

Changseung Lee

Kiyoung Lee

Kyooho Jung

Darrell G Schlom

Sangyeol Kang

Myoungho Jeong

Natalie M Dawley

Gerhard H Olsen

Zhe Wang

Craig J Fennie

A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.

Capacitor including perovskite material, semiconductor device including the capacitor, and method of manufacturing the capacitor

A thin-film structure includes a support layer and a dielectric layer on the support layer. The support layer includes a material having a lattice constant. The dielectric layer includes a compound having a Ruddlesden-Popper phase (ABX). where A and B each independently include a cation, X is an anion, and n is a natural number. The lattice constant of the material of the support layer may be less than a lattice constant of the compound.

Thin-film structure and method of manufacturing the same

A method of manufacturing a semiconductor device includes forming a first electrode, forming a preliminary dielectric layer on the first electrode, forming a second electrode on the preliminary dielectric layer, and at least partially phase-changing the preliminary dielectric layer to form a dielectric layer. An interfacial energy between the first electrode and the dielectric layer may be less than an interfacial energy between the first electrode and the preliminary dielectric layer.

Semiconductor device and method of manufacturing the same

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Hyosik Mun