Samsung Electronics Co., Ltd.

Hyosig Won

Sanghoon Baek

Jintae Kim

Taejoong Song

Jae-Ho Park

Sang-Kyu Oh

Giyoung Yang

ChungHee Kim

Sunyoung Park

Jung-Ho Do

Wook Hwan Kim

Jun Seomun

Kwangok Jeong

Hyungock Kim

Kee Sup Kim

Kyungtae Do

Chungki Oh

JaeHan Jeon

JungYun Choi

DaiJoon Hyun

Generating a routing between pins of a semiconductor device may include selecting one or more of candidate pins of the semiconductor device, generating a net list associated with the selected pins generating an interface script to execute the net list in a library-based disposition and wiring tool that is driven in a computer system, and executing the interface script through the library-based disposition. Pins may be selected from the candidate pins based on at least one of density, shapes, intervals, and sizes among the candidate pins. The net list may define a set of electrical connections between the selected pins.

Method for routing between pins of semiconductor device and design system therewith

Provided is a method for testing a plurality of transistors of a semiconductor device. The method includes forming a plurality of elements or a plurality of logic using a Front End Of Line (FEOL) process, forming a selection logic using at least one of the plurality of elements or the plurality of logic cells, connecting the selection logic and the plurality of transistors, forming a pad for connecting an input terminal of the selection logic and drain or source terminals of the plurality of transistors, and sequentially selecting the plurality of transistors using the selection logic and measuring an electrical characteristic of selected transistors among the plurality of transistors.

Semiconductor device for testing large number of devices and composing method and test method thereof

A method of generating a photo mask for use during fabrication of a semiconductor device includes; generating an initial layout design including critical circuit paths and non-critical circuit paths by shielding all gate line patterns used to implement transistors in the critical circuits and non-critical circuits, and thereafter generating a layout design from the initial layout design by selectively un-shielding a non-critical gate line pattern among the gate line patterns used to implement a gate of a non-critical transistor in a non-critical circuit, while retaining the shielding of all critical gate line patterns among the gate line patterns.

Integrated circuit layout design system and method

A semiconductor device includes a substrate having an active region, a gate structure intersecting the active region and extending in a first direction parallel to a top surface of the substrate, a first source/drain region and a second source/drain region disposed in the active region at both sides of the gate structure, respectively, and a first modified contact and a second modified contact in contact with the first source/drain region and the second source/drain region, respectively. The distance between the gate structure and the first modified contact is smaller than the distance between the gate structure and the second modified contact.

Semiconductor device and method for manufacturing the same

A method of manufacturing a semiconductor device includes forming an active pattern and a gate electrode crossing the active pattern on a substrate, forming a first contact connected to the active pattern at a side of the gate electrode, forming a second contact connected to the gate electrode, and forming a third contact connected to the first contact at the side of the gate electrode. The third contact is formed using a photomask different from that used to form the first contact. A bottom surface of the third contact is disposed at a level in the device lower than the level of a top surface of the first contact.

Method of manufacturing semiconductor devices

A temperature control method of a semiconductor device is provided. The temperature control method includes detecting a temperature of the semiconductor device; activating a reverse body biasing operation in which a body bias voltage applied to a function block of the semiconductor device is regulated, when the detected temperature is greater than a first temperature level; and activating a thermal throttling operation in which at least one of a frequency of a driving clock provided to a function block of the semiconductor device and a driving voltage applied to the function block of the semiconductor device is regulated, when the detected temperature is greater than a second temperature level that is different than the first temperature level.

System on chip and temperature control method thereof

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Suwon-si, South Korea

Hyosig Won