Samsung Electronics Co., Ltd.

Hyoseok Choi

Sunghwan Kim

Wandon Kim

Yoonhae Kim

Hwichan Jun

Doo-Young Lee

Hyunbae Lee

Heungsik Park

Chulsung Kim

Junki Park

Provided is a semiconductor device including a substrate with an active pattern, a gate electrode crossing the active pattern, a source/drain region in an upper portion of the active pattern at a side of the gate electrode, the source/drain region including a recess region at an upper region thereof, a contact electrically connected to the source/drain region, the contact including a lower portion provided in the recess region, and a metal silicide layer provided at a lower region of the recess region and between the source/drain region and the contact.

Semiconductor device

Semiconductor device with field effect transistors and method of fabricating the same

Growing community of inventors

Hwaseong-si, South Korea

Hyoseok Choi