Samsung Electronics Co., Ltd.

Soulbrain Co., Ltd.

Dongwoo Fine-chem Co., Ltd.

Cornell University

Enf Technology Co., Ltd.

Hyosan Lee

Kuntack Lee

Jung-Min Oh

Yongsun Ko

Yong-Jhin Cho

Young-Hoo Kim

Kyoungseob Kim

Yongmyung Jun

SeokHoon Kim

Mihyun Park

Jihoon Jeong

Sang Won Bae

Hoon Hee Han

Jung Hun Lim

Jungmin Oh

Ingi Kim

Kyoung Hwan Kim

Yungjun Kim

Sol Han

Jinwoo Lee

Donghyun Kim

Boun Yoon

Jin Uk Lee

Byoungho Kwon

Kwangsu Kim

Bo Yun Kim

Keonyoung Kim

Hongjin Kim

Jungah Kim

Hyojoong Yoon

Changsu Jeon

Ui-soon Park

Sungoh Park

Jaesung Lee

Minjung Kim

Myung Ho Lee

Jae Sung Lee

Sangjin Hyun

Christopher Kemper Ober

Hoonjoo Na

Kang-Ill Seo

Sanghyun Park

Soojin Kim

Siyoung Choi

Hye-Lan Lee

Sunghyun Park

Tae-Hong Kim

Hagju Cho

Hyung-seok Hong

Chawon Koh

Sangkyun Kim

Ji Hoon Cha

Yugyun Shin

Changki Hong

Junghun Lim

Sangjun Choi

Imsoo Park

Hyo-Sun Lee

Haksoo Kim

Youngok Kim

Changjun Park

Woosung Han

Soo Young Choi

Inkwon Kim

Chae Lyoung Kim

Hyungho Ko

Daehyuk Kang

Wonki Hur

Donggyun Han

Dongwun Shin

Subin Oh

Jun-Woong Park

Kihun Song

Jongwook Baek

Sangwon Bae

Yearin Byun

Jung Jae Oh

Chen Lin

Kyongseob Kim

Jinkyu Roh

A slurry composition for a chemical mechanical polishing (CMP) process, the slurry composition including a first organic polishing booster including a quaternary amine group; a second organic polishing booster including an amino acid; and a carrier; wherein inorganic polishing particles are not included in the slurry composition or included in an amount of less than 0.01% by weight.

Slurry composition for chemical mechanical polishing

An etchant composition for etching a silicon germanium film includes, based on a total weight of the etchant composition, about 5 wt % to about 14 wt % of an oxidant, about 0.01 wt % to about 5 wt % of a fluorine compound, about 0.01 wt % to about 5 wt % of an amine compound, about 0.01 wt % to about 1 wt % of an alcohol compound having a hydrophilic head and a hydrophobic tail, about 60 wt % to about 90 wt % of an organic solvent, and a balance of water. A method of manufacturing an integrated circuit device includes: forming, on a substrate, a structure in which a plurality of silicon films and a plurality of silicon germanium films are alternately stacked; and selectively removing the plurality of silicon germanium films by using the etchant composition.

Etchant composition for etching silicon germanium film and method of manufacturing integrated circuit device by using the same

A method of etching a metal barrier layer and a metal layer is provided. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.

Etching composition, a method of etching a metal barrier layer and a metal layer using the same, and method of manufacturing semiconductor device using the same

A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

Process chamber and substrate processing apparatus including the same

Metal-containing film etchant compositions may include hydrogen peroxide (HO), a phosphoric acid compound, a heterocyclic organic amine compound including at least one heteroatom in a ring, and water. Manufacturing methods of an integrated circuit (IC) may include performing a dry etch process on a conductive structure including a metal nitride film and a metal film to form a conductive pattern intermediate product and performing a wet etch process on the conductive pattern intermediate product using an etching atmosphere providing a higher etch selectivity with respect to the metal nitride film than the metal film. The etching atmosphere may include an etchant composition including hydrogen peroxide, a phosphoric acid compound, a heterocyclic organic amine compound including at least one heteroatom in a ring, and water.

Etchant compositions for metal-containing films and methods of manufacturing integrated circuit devices using the etchant compositions

An etching composition and a method of manufacturing a semiconductor device, the composition including 5 wt % to 30 wt % of an oxidizing agent, based on a total weight of the etching composition; a salt including an anion including a carboxylate moiety having 1 to 5 carbon atoms, and an ammonium cation; and a chelating agent including a phosphonic acid having 1 to 8 carbon atoms.

Etching composition and method for manufacturing semiconductor device using the same

Disclosed are substrate drying methods, photoresist developing methods, and/or photolithography methods. The substrate drying method including providing a drying liquid on a substrate, increasing a pressure of the drying liquid to produce a supercritical fluid, and removing the supercritical fluid to dry the substrate may be provided.

Substrate drying method, photoresist developing method, photolithography method including the same, and substrate drying system

A silicon layer etchant composition and associated methods, the composition including about 1 wt % to about 20 wt % of an alkylammonium hydroxide; about 1 wt % to about 30 wt % of an amine compound; about 0.01 wt % to about 0.2 wt % of a nonionic surfactant including both a hydrophobic group and a hydrophilic group; and water, all wt % being based on a total weight of the silicon layer etchant composition.

Silicon layer etchant composition and method of forming pattern by using the same

Disclosed is a method of etching a metal barrier layer and a metal layer. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.

A pre-treatment composition for use before etching SiGe includes an acid, an alcohol, and a silane compound having a chemical formula R&#x2014;Si(R)(OR)in which R is (C3-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C3-C20)alkyl, or (C3-C20)alkyl(C6-C12)aryl, Ris hydrogen, hydroxyl, halogen, (C1-C20)alkyl, halo(C1-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C1-C20)alkyl, or (C1-C20)alkyl(C6-C12)aryl, Ris hydrogen, (C1-C20)alkyl, halo(C1-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C1-C20)alkyl, or (C1-C20)alkyl(C6-C12)aryl, n is an integer of 0 to 2, and the alkyl, aryl, arylalkyl, or alkylaryl of R, and the alkyl, haloalkyl, aryl, arylalkyl, or alkylaryl of Rmay be further substituted with at least one substituent selected from halogen, hydroxyl, &#x2014;N(R)(R), and &#x2014;S(R), where each of the R, the Rand the Ris independently hydrogen or (C1-C20)alkyl.

Pre-treatment composition before etching SiGe and method of fabricating semiconductor device using the same

A cleaning apparatus for removing particles from a substrate is provided. The cleaning apparatus includes a first cleaning unit including a first dual nozzle supplying, to a substrate, a first chemical liquid and a first spray including a first liquid dissolving the first chemical liquid, and a second cleaning unit including a second dual nozzle supplying, to the substrate, a second chemical liquid different from the first chemical liquid and a second spray including a second liquid dissolving the second chemical liquid and being the same as the first liquid.

Cleaning apparatus, chemical mechanical polishing system including the same, cleaning method after chemical mechanical polishing, and method of manufacturing semiconductor device including the same

A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.

Apparatus and methods for treating a substrate

A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.

Substrate treating apparatus

The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.

Metal etchant compositions and methods of fabricating a semiconductor device using the same

Growing community of inventors

Hwaseong-si, South Korea

Hyosan Lee