Samsung Electronics Co., Ltd.

Hyongsik Won

Yeonjun Sung

Joonwoo Jeon

Soonwon Jeong

Jongho Lim

Sangbok Yun

Hanna Heo

Myoungsu Chae

A light emitting device package includes a package substrate, a semiconductor light emitting device on the package substrate, the semiconductor light emitting device including a substrate with a light emitting structure, a wavelength conversion portion on the semiconductor light emitting device, the wavelength conversion portion including a first region overlapping the light emitting structure, and a second region other than the first region, an adhesive layer between the semiconductor light emitting device and the wavelength conversion portion, and a reflective resin portion on the package substrate, the reflective resin portion surrounding the semiconductor light emitting device and the wavelength conversion portion, and the reflective resin portion extending to the second region.

Light emitting device package

A light-emitting diode (LED) package includes a package substrate, an LED chip disposed on a first surface of the package substrate, and a first external connection pad and a second external connection pad disposed on a second surface of the package substrate opposite the first surface. The first external connection pad includes a first side, a second side, a third side and a fourth side, the first side being parallel to the second side, and the third side being parallel to the fourth side. The first side is spaced farther from a center of the package substrate than the second side. A length of the first side is shorter than a length of the second side.

Light emitting diode (LED) package and illuminating device including the same

A light emitting device package includes a first molding member surrounding a heat dissipation frame, a first electrode frame, and a second electrode frame; a first semiconductor light emitting device on the heat dissipation frame and having first and second pads; a second semiconductor light emitting device on the heat dissipation frame and having first and second pads; a wavelength conversion layer on the first and second semiconductor light emitting structures; a first bonding wire connected to the first pad of the first semiconductor light emitting device and the first electrode frame; a second bonding wire connected to the second pad of the second semiconductor light emitting device and the second electrode frame; and an inter-chip bonding wire connecting the second pad of the first semiconductor light emitting device to the first pad of the second semiconductor light emitting device.

Growing community of inventors

Yongin-si, South Korea

Hyongsik Won