Samsung Electronics Co., Ltd.

Dongwoo Fine-chem Co., Ltd.

Hyojoong Yoon

Hyosan Lee

Jungmin Oh

Hoon Hee Han

Minjung Kim

Changsu Jeon

Kihun Song

Jongwook Baek

Jinkyu Roh

Dongwun Shin

Metal-containing film etchant compositions may include hydrogen peroxide (HO), a phosphoric acid compound, a heterocyclic organic amine compound including at least one heteroatom in a ring, and water. Manufacturing methods of an integrated circuit (IC) may include performing a dry etch process on a conductive structure including a metal nitride film and a metal film to form a conductive pattern intermediate product and performing a wet etch process on the conductive pattern intermediate product using an etching atmosphere providing a higher etch selectivity with respect to the metal nitride film than the metal film. The etching atmosphere may include an etchant composition including hydrogen peroxide, a phosphoric acid compound, a heterocyclic organic amine compound including at least one heteroatom in a ring, and water.

Etchant compositions for metal-containing films and methods of manufacturing integrated circuit devices using the etchant compositions

A silicon layer etchant composition and associated methods, the composition including about 1 wt % to about 20 wt % of an alkylammonium hydroxide; about 1 wt % to about 30 wt % of an amine compound; about 0.01 wt % to about 0.2 wt % of a nonionic surfactant including both a hydrophobic group and a hydrophilic group; and water, all wt % being based on a total weight of the silicon layer etchant composition.

Silicon layer etchant composition and method of forming pattern by using the same

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Hyojoong Yoon