Samsung Electronics Co., Ltd.

HyoJoong Kim

Songha Oh

In-Young Kim

Sang Bong Shin

ByeongHoon Kim

Changgoo Jung

Provided is a semiconductor device and a method of fabricating the same. The method may include forming trenches in a substrate and lower gate patterns on the substrate between the trenches, forming sacrificial patterns filling the trenches, forming a porous insulating layer on the lower gate patterns to cover top surfaces of the sacrificial patterns, removing the sacrificial patterns through pores of the porous insulating layer to form air gaps surrounded by the trenches and the porous insulating layer, and forming a liner insulating layer on inner surfaces of the trenches through the pores of the porous insulating layer.

Semiconductor device and method of fabricating the same

A semiconductor device includes a substrate including an active region defined by a device isolation pattern and a floating gate on the active region. The floating gate includes an upper portion, a lower portion having a width greater than a width of the upper portion, and a step-difference portion between the upper portion and the lower portion. A dielectric pattern is on the floating gate, and a control gate is on the dielectric pattern. The lower portion of the floating gate has a height of about 4 nm or more.

Methods of manufacturing semiconductor devices including variable width floating gates

Semiconductor devices including variable width floating gates

Growing community of inventors

Seongnam-si, South Korea

HyoJoong Kim