Samsung Electronics Co., Ltd.

Kpx Chemical Co., Ltd.

Jsr Corporation

Cj Cheiljedang Corporation

Hyojin Yun

Sechul Park

Taeyoung Kim

Hyunwoo Kim

Hoon Hee Han

Jongho Park

Unbyoung Kang

Moonyoung Kim

Hyunseop Shin

Cheolmo Yang

Un-Byoung Kang

Su Jin Kim

Ju-Il Choi

Hyoungjoo Lee

Heeseok Lee

Yunseok Choi

Juil Choi

Atsushi Fujisaki

Su-Min Park

Bina Kim

Heewon Kim

Sung Kwang Son

Byoung Hoon Yoon

Teakhoon Lee

Seon Hye Kim

Jinhye Bae

Seungwon Kim

Woojung Park

Mintae Lee

Soo-Kyung Kim

Hirofumi Goto

Myung-sun Kim

Chawon Koh

Lan Huh

Moonchang Kim

So-Ra Han

Su Min Kim

Kouji Nishikawa

Se-Yeon Kim

Sangsick Park

Hidetoshi Miyamoto

Min Ju Park

Kyoungseon Kim

Haena Oh

Hyeryun Yoo

Haisub Na

Hun Jung Yi

Sangpyoung Jeon

Changeun Yoo

Goun Park

A semiconductor package includes a first semiconductor chip on a base chip, a second semiconductor chip on the first semiconductor chip in a first direction, each of the first and second semiconductor chips including a TSV and being electrically connected to each other via the TSV, dam structures on the base chip and surrounding a periphery of the first semiconductor chip, a first adhesive film between the base chip and the first semiconductor chip, a portion of the first adhesive film filling a space between the first semiconductor chip and the dam structures, a second adhesive film between the first semiconductor chip and the second semiconductor chip, a portion of the second adhesive film overlapping the dam structures in the first direction, and an encapsulant encapsulating a portion of each of the dam structures, the first semiconductor chip, and the second semiconductor chip.

Semiconductor package

A photoresist-removing composition includes a polar organic solvent, an alkyl ammonium hydroxide, an aliphatic amine not including a hydroxy group, and a monovalent alcohol. To manufacture a semiconductor device, a photoresist pattern may be formed on a substrate, and the photoresist-removing composition may then be applied to the photoresist pattern. To manufacture a semiconductor package, a photoresist pattern including a plurality of via holes may be formed on a substrate. A plurality of conductive posts including a metal may be formed inside the plurality of via holes, and the photoresist pattern may be removed by applying a photoresist-removing composition of the inventive concept to the photoresist pattern. A semiconductor chip may be adhered to the substrate between the respective conductive posts.

Compositions for removing photoresists and methods of manufacturing semiconductor devices and semiconductor packages using the compositions

Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a substrate that includes a plurality of vias, a first chip stack on the substrate and including a plurality of first semiconductor chips that are sequentially stacked on the substrate, and a plurality of first non-conductive layers between the substrate and the first chip stack and between neighboring first semiconductor chips. Each of the first non-conductive layers includes first extensions that protrude outwardly from first lateral surfaces of the first semiconductor chips. The more remote the first non-conductive layers are from the substrate, the first extensions protrude a shorter length from the first lateral surfaces of the first semiconductor chips.

Semiconductor package and method of fabricating the same

A semiconductor package includes: a first semiconductor chip; a second semiconductor chip stacked on the first semiconductor chip; an underfill material layer interposed between the first semiconductor chip and the second semiconductor chip; and a first dam structure disposed on the first semiconductor chip. The first dam structure extends along an edge of the second semiconductor chip and includes unit dam structures apart from each other with a slit therebetween. A vertical level of an upper surface of the first dam structure is located between a vertical level of a lower surface of the second semiconductor chip and a vertical level of an upper surface of the second semiconductor chip. A first sidewall of the first dam structure is in contact with the underfill material layer and includes a flat surface parallel to a sidewall of the second semiconductor chip that faces the first sidewall of the first dam structure.

Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns.

Method of forming fine patterns in an anti-reflection layer for use as a patterning hard mask

A photolithographic rinse solution includes deionized water, and a surfactant, the surfactant including a cyclic amine group and at least one non-amine cyclic group joined to or fused with the cyclic amine group, wherein the cyclic amine group includes a ring having a carbon number of 4 to 6, and the non-amine cyclic group includes a ring having a carbon number of 5 to 8.

Photo lithographic rinse solution and method of manufacturing a semiconductor device using the same

A plasma generating unit for a process monitoring device includes a hollow first electrode extending in a length direction and a second electrode extending in the length direction and positioned within and displaced from the first electrode with a distance therebetween. The first electrode has an inner diameter and the second electrode has an outer diameter selected to vary the distance between the electrodes in the length direction so that the plasma generating unit generates a plasma by ionizing a gas flowing between the electrodes at a different position in the length direction based on a pressure of the gas.

Plasma monitoring device using a cylindrical hollow electrode

A compound synthesis method includes bonding a first compound to a substrate to form a first film. A second film is formed on the first film using an acid-transfer composition including (A) a polymer that includes a structural unit shown by a following formula (1) and a structural unit shown by a following formula (2), (B) a photoacid generator shown by a following formula (3), and (C) a sensitizer shown by a following formula (4). The second film is exposed to remove the protecting group from the first compound under an exposed area of the second film. An acid generated in the exposed area of the second film is transferred to the first film. The second film after being exposed is removed. A second compound is bonded to the first compound from which the protecting group has been removed. 

Compound synthesis method, microarray, acid-transfer composition, and biochip composition

Growing community of inventors

Gyeonggi-do, South Korea

Hyojin Yun