Lg Electronics Inc.

Lg Display Co., Ltd.

Samsung Electronics Co., Ltd.

Electronics and Telecommunications Research Institute

Wellmarker Bio Co., Ltd.

HyoJin Kim

Dongeun Kim

Daewon Ha

YoungJang Lee

SoYoung Noh

Sungmin Kim

Keun Hwi Cho

Hyuk Ji

Soonmoon Jung

Hophil Lee

Joonhyung Kim

Hyunho Lee

KiTae Kim

Seungbeom Park

Jaehyun Park

Jihye Lee

Hyo-Jin Kim

Mansoo Sin

Hoyoun Lee

Yong-Tae Lee

Sungil Park

Eui-Suk Jung

Jaewoo Park

Sangkuk Jeon

Hyunho Park

Joonwon Byun

Yehan Ahn

SeungChan Choi

SungBin Ryu

JunHo Lee

Chun-Ho Park

Hyebin Park

Jai-Hee Moon

UiJin Chung

Eunsung Kim

HyunSoo Shin

Wonkyung Kim

Kyeongju Moon

JinChae Jeon

Joseph Kim

Sungwon Byon

Seung-Woo Hong

Yoon-Sun Park

Bokyoung Cho

Jeanhan Yoon

SoYeon Je

Eunjung Kwon

Jeihyun Lee

Sangku Ahn

Sun Chul Hur

Jae-Sik Shin

Sohee Lee

A semiconductor device includes a first device including first active regions and first to third structures thereon, and a second device including a second active region, a gate structure intersecting the second active region, and a source/drain region including a lower source/drain region on the second active region having first-type conductivity, an inter-source/drain region insulating layer on the lower source/drain region, and an upper source/drain region on the inter-source/drain region insulating layer and having second-type conductivity. The first structure includes first lower and upper impurity regions. The second structure includes a second lower impurity region having the first-type conductivity, an inter-impurity region insulating layer, and a second upper impurity region having the second-type conductivity. The third structure includes third lower and upper impurity regions having the second-type conductivity, the third upper impurity region having an impurity concentration higher than a that of the third lower impurity region.

Semiconductor device

A wireless sound device capable of effectively receiving a command that meets a user's intention without an error despite a user input unit having a limited size, and a method for controlling the same. The wireless sound device includes a wireless communication unit for wireless communication with an external device, a touch sensor for sensing a touch input of a user in a touch standby mode, a force sensor for sensing a force based on the touch input, a sound output unit for outputting an audio signal received from the external device, and a controller that controls a touch mode of the wireless sound device to be switched to a touch accepting mode or a touch ignoring mode in response to the touch input, and, when a touch validity of the touch input is positive, the controller controls the touch mode to be switched to a touch accepting mode or a touch ignoring mode based on a force validity of the touch input.

Wireless sound device and method for controlling the same

Provided are a display device and a method for manufacturing the same. The display device includes: a connection source electrode and a connection drain electrode connected to a first source electrode a the first drain electrode, respectively by penetrating an isolation insulating layer and a second interlayer dielectric layer to enhance a characteristic of an element and reliability of the display device.

Display device and method for manufacturing the same

A semiconductor device includes first active patterns on a PMOSFET section of a logic cell region of a substrate, second active patterns on an NMOSFET section of the logic cell region, third active patterns on a memory cell region of the substrate, fourth active patterns between the third active patterns, and a device isolation layer that fills a plurality of first trenches and a plurality of second trenches. Each of the first trenches is interposed between the first active patterns and between the second active patterns. Each of the second trenches is interposed between the fourth active patterns and between the third and fourth active patterns. Each of the third and fourth active patterns includes first and second semiconductor patterns that are vertically spaced apart from each other. Depths of the second trenches are greater than depths of the first trenches.

A thienopyridine derivative compound represented by Formula 1 or pharmaceutically acceptable salts thereof have an excellent inhibitory effect on protein kinase activity, and accordingly, pharmaceutical compositions containing the thienopyridine compound can be usefully used for the prevention or treatment of a disease associated with the activity of a protein kinase.

Thienopyridine derivatives and pharmaceutical composition comprising same

The present invention relates to dangerous situation detection method and apparatus using a time series analysis of user behaviors. The dangerous situation detection method and apparatus using a time series analysis of user behaviors according to the present invention includes recognizing user behaviors in a time series manner using sensor sensing data, setting stability interval periods and reflecting stability factors on the user behaviors recognized in the time series manner for each of the stability interval periods to set a stability level, and determining a danger level on the basis of the recognized user behaviors and the set stability level.

Dangerous situation detection method and apparatus using time series analysis of user behaviors

A thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same are discussed. The thin film transistor substrate can include a substrate, a first thin film transistor (TFT), a second TFT, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first TFT is disposed in a first area, the second TFT is disposed in a second area, and the first storage capacitor electrode is disposed in a third area on the substrate respectively. The oxide layer covers the first and second TFTs, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first and second TFTs, and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.

Thin film transistor substrate and display using the same

Mobile phone

Disclosed is a display device and a method for manufacturing the same, the display device comprising a display panel including an upper substrate, a lower substrate confronting the upper substrate, and a film member attached to a front surface of the upper substrate; a cover member receiving the display panel, and covering a lateral side of the display panel; and a bumper between the lateral side of the display panel and the cover member, wherein the film member is provided with an extending part which extends more than the end of the upper substrate by a predetermined range in a longitudinal direction.

Cellular phone

Growing community of inventors

Seoul, South Korea

HyoJin Kim