Samsung Electronics Co., Ltd.

Hyojin Ahn

Seoyeong Lee

Changjun Lee

Hoon Jo

Heewon Lee

Kwangwoo Lee

Sangjin Yoo

Byungchan Park

Seongkuk Kim

Dongcheul Jang

The present disclosure provides apparatuses and methods for operating a flash memory for programming operating system (OS) data before an surface mount technology (SMT) process. In some embodiments, the method includes erasing a plurality of memory cells in a memory block, reducing a lateral charge loss of the plurality of memory cells due to high temperature degradation during the SMT process by applying a pre-program voltage to word lines coupled to the memory block, and performing multi-bit programming of the OS data in the plurality of memory cells, prior to performing the SMT process. The applying of the pre-program voltage causes threshold voltages of the plurality of memory cells to increase.

Flash memory for reducing reliability degradation of OS data due to SMT process

There is provided a storage device, which includes: a memory device that includes a plurality of memory blocks, and stores first meta data including first status data and a first parameter in a first memory block among the plurality of memory blocks; and a memory controller that stores second meta data including second status data and second parameters, determines final meta data among a plurality of pieces of meta data including the first meta data and the second status data by comparing a plurality of pieces of status data with the first status data and the second status data, performs parameter confirmation for storing the final meta data in the meta block, and controls the memory device based on a parameter stored in the meta block.

Storage device and method for storing meta data in a distributed manner

In some embodiments, an operating method of a storage device includes obtaining a plurality of points by searching for a first valley point between threshold voltage distributions of selection memory cells coupled to a selection word line of a plurality of word lines; calculating, using a first function, a first voltage level that corresponds to a first reference count value; calculating, using a second function, a second voltage level that corresponds to the first reference count value; classifying the selection memory cells into a plurality of coupling patterns according to an aggressor cell group of each of adjacent memory cells coupled to at least one adjacent word line adjacent to the selection word line; and performing a read operation, based on the plurality of coupling patterns of the selection memory cells, the first voltage level, and the second voltage level.

Non-volatile memory device, storage device, operating method of storage controller, and operating method of the storage device

An operating method of a storage device including a memory controller and a non-volatile memory, the method including: performing a first read in response to a read request by reading data from the non-volatile memory using a default read voltage set; and performing a second read when the first read fails, by calculating a degradation compensation level, using a weight table, offset table, and displacement level, calculating a history read voltage set by performing an operation on the default read voltage set and degradation compensation level, and reading the data using the history read voltage set, wherein the weight table includes weights preset according to word line groups and state read voltages, the offset table includes offset levels preset according to the word line groups and the state read voltages, and the displacement level corresponds to a difference between a default read voltage level and an optimal read voltage level.

Growing community of inventors

Suwon-si, South Korea

Hyojin Ahn