Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Dongjin Semichem Co., Ltd.

Hyoc-Min Youn

Byung-Uk Kim

Hoon Jong Kang

Sang-Hoon Lee

Jeong-Min Park

Hi-Kuk Lee

Ki-Hyuk Koo

Jin Ho Ju

Jin-Sun Kim

Ji-Hyun Kim

Jun Su Chun

Dong-Ki Lee

Jae-Sung Kim

Seung Bo Shim

Ki-Hyun Cho

Sung-Kyun Park

Tai Hoon Yeo

Tai-Hoon Yeo

Joo-Pyo Yun

Tae-Hoon Yeo

Hyang-Shik Kong

Jin-Ho Ju

Yang-Ho Jung

Koichi Sugitani

Jung-Soo Lee

Jeong Won Kim

Jun Hyuk Woo

Doo-Hee Jung

Jun Gi Kim

Kwang Woo Park

Yeong-Beom Lee

Jin-Young Choi

Byung Uk Kim

Sang-Gak Choi

Dong-Myung Kim

Dong Myung Kim

Ah Rum Park

Gi Seon Lee

Kyoungsoon Shin

Seok Hyeon Lee

Wooram Oh

Jonghyuk Park

The present disclosure relates to a photopolymerizable composition capable of improving UV transmittance while maintaining excellent performance such as dielectric constant and sensitivity of a display device, and a cured film and a display device using the same.

Photopolymerizable composition and cured film and display device using the same

This invention relates to a positive photosensitive resin composition that includes a siloxane copolymer of two kinds of reactive silane compounds with specific structures wherein residual impurities such as unreacted monomers and catalysts are minimized, and a UV absorber including one or more kinds of phenol hydroxyl groups capable of crosslinking and an alkoxy group. Accordingly, the resin composition exhibits excellent performances such as sensitivity, resolution, and degree of planarization, and also has excellent weatherability and UV absorbance, thereby providing excellent panel reliability.

Positive photosensitive resin composition and display device using the same

A positive photosensitive siloxane resin composition includes a) a siloxane copolymer obtained by performing hydrolysis and condensation polymerization of i) at least one reactive silane represented by the following Chemical Formula 1 and ii) at least one 4-functional reactive silane represented by the following Chemical Formula 2 under a catalyst, the copolymer having a polystyrene-converted weight average molecular weight Mw of 1,000 to 20,000, b) a 1,2-quinonediazide compound, and c) a solvent,(R)Si(R)&#x2003;&#x2003;[Chemical Formula 1]Si(R)&#x2003;&#x2003;[Chemical Formula 2]wherein Rs may each independently be any one of an alkyl group having 1 to 10 carbon atoms and an aryl group having 6 to 15 carbon atoms, Rmay be an alkoxy group having 1 to 4 carbon atoms, phenoxy, or acetoxy, Rs may each independently be any one of an alkoxy group having 1 to 4 carbon atoms, phenoxy, or an acetoxy group, and n may be a natural number of 1 to 3.

Positive photosensitive siloxane resin composition and display device formed using the same

A photoresist composition includes about 0.1 to about 30 parts by weight of a photo-initiator, about 1 to 50 parts by weight of a first acrylate monomer including at least five functional groups, about 1 to 50 parts by weight of a second acrylate monomer including at most four functional groups with respect to about 100 parts by weight of an acryl-copolymer.

Photoresist composition and method of manufacturing a thin film transistor substrate

A photoresist composition includes an acid-labile polymer that is decomposable by reaction with an acid, a photoacid generator, an organic base having a pKvalue of 9 or less and a solvent. Based on 100 parts by weight of the acid-labile polymer, the photoacid generator is about 1 to about 30 parts by weight, and the organic base is about 0.1 to about 5 parts by weight. The solvent is about 50 to about 90 wt % based on the total weight of the composition.

Photoresist composition

A photosensitive resin composition is disclosed. The disclosed photosensitive resin composition includes an acryl-based copolymer formed by copolymerizing i) unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, or a mixture thereof, and ii) an olefin-based unsaturated compound or a mixture thereof, a dissolution inhibitor in which a phenolic hydroxyl group is protected by an acid-degradable acetal or ketal group, a photoacid generator, and a solvent.

Photosensitive resin composition, method of forming pattern, and liquid crystal display using the same

A photosensitive resin composition includes: an acrylic copolymer comprising a polymerization product of a first monomer comprising at least one selected from an unsaturated carboxylic acid and an unsaturated carboxylic acid anhydride, and a second monomer comprising an olefin-based unsaturated compound; a photosensitive component comprising at least one 1,2-quinonediazide-5-sulfonic acid ester compound selected from compounds represented by Chemical Formulae 1 to 4; a coupling agent; and a solvent, wherein a total amount of asymmetric compounds in the photosensitive component is greater than or equal to 45 area percent as determined by high performance liquid chromatography: 

Photosensitive resin composition and method of forming pattern using the same

A method of fabricating a thin film transistor substrate and a negative photoresist composition used therein are provided, which can reduce pattern inferiority. The method of fabricating a thin film transistor substrate includes forming a conductive film composed of a conductive material on a substrate, forming an etch pattern composed of a negative photoresist composition on the conductive film, and forming a conductive pattern by etching the conductive film using the etch pattern as an etching mask, wherein the negative photoresist composition includes 10-50 parts by weight of novolak resin including a hydroxyl group that is soluble in an alkali developing solution, 0.5-10 parts by weight of a first photo acid generator represented by the following formula (1), 0.5-10 parts by weight of a second photo acid generator represented by the following formula (2), 1-20 parts by weight of a cross-linking agent, and 10-90 parts by weight of a solvent: 

Method of fabricating thin film transistor substrate and negative photoresist composition used therein

Disclosed herein is a resin composition for an organic insulating layer, a method of manufacturing the same, and a display panel including an insulating layer formed using the resin composition. The resin composition for an organic insulating layer is produced by polymerizing about 5 to about 35 wt % of an unsaturated carboxylic acid, an unsaturated carboxylic acid anhydride, or a mixture of the unsaturated carboxylic acid and the unsaturated carboxylic acid anhydride, about 5 to about 40 wt % of a styrene compound, about 5 to about 40 wt % of an epoxy compound, about 0.1 to about 10 wt % of an isobornyl compound, and about 20 to about 40 wt % of a dicyclopentadiene compound, based on the total weight of unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, styrene compound, isobornyl compound, and dicyclopentadiene compound.

Resin composition for organic insulating layer, method of manufacturing resin composition, and display panel including resin composition

A photosensitive resin composition for an organic layer pattern includes about 100 parts by weight of an acryl-based copolymer and about 5 to about 100 parts by weight of a 1,2-quinonediazide compound. The acryl-based copolymer is prepared by copolymerizing about 5 to about 60 percent by weight of an isobonyl carboxylate-based compound based on a total weight of the acryl-based copolymer, about 10 to about 30 percent by weight of an unsaturated compound carrying an epoxy group, about 20 to about 40 percent by weight of an olefin-based unsaturated compound, and about 10 to about 40 percent by weight of one selected from unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, and a mixture thereof. Methods of manufacturing a TFT substrate and a common electrode substrate using the photosensitive resin composition are also provided. Advantageously, the organic layer pattern may have a mountain structure having an improved local flatness without concave and convex structures.

Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same

In one example, a photoresist composition includes about 1 to about 70 parts by weight of a first binder resin including a repeat unit represented by the following Chemical Formula 1, about 1 to about 70 parts by weight of a second binder resin including a repeat unit represented by the following Chemical Formula 2, about 0.5 to about 10 parts by weight of a photo-acid generator, about 1 to about 20 parts by weight of a cross-linker and about 10 to about 200 parts by weight of a solvent. The photoresist composition may improve the heat resistance and adhesion ability of a photoresist pattern.  wherein Rand Rindependently represent an alkyl group having 1 to 5 carbon atoms, and n and m independently represent a natural number.

Photoresist composition and method of manufacturing a thin-film transistor substrate using the same

A photoresist composition includes about 10 to about 70% by weight of a binder resin including a phenol-based polymer, about 0.5 to about 10% by weight of a photo-acid generator, about 1 to about 20% by weight of a cross-linker, about 0.1 to about 5% by weight of a dye and about 10 to about 80% by weight of a solvent. The photoresist composition may be applied to, for example, a method of manufacturing a TFT substrate.

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Hwaseong-si, South Korea

Hyoc-Min Youn