Semes Co., Ltd.

Hyo Won Yang

Ki Hoon Choi

Tae Hee Kim

Hyun Yoon

Ji Hoon Jeong

Ki-Moon Kang

In Ki Jung

Hyun Goo Park

Sang Min Lee

Se Hoon Oh

Seung Hoon Oh

Young Dae Chung

Young Ho Park

Yong Joon Im

Sang Hyeon Ryu

The present invention provides a substrate treating apparatus including: a support unit supporting and rotating the substrate in a treatment space; a liquid supply unit supplying a liquid to the substrate supported by the support unit; and an irradiating module irradiating light to the substrate supported by the support unit, in which the irradiating module includes: a housing having an accommodation space; a laser unit located in the accommodation space, and including a laser irradiation unit irradiating laser light, and an irradiation end having one end protruding from the housing and irradiating the laser light irradiated from the laser irradiation unit to the substrate supported by the support unit; and a cooling unit located in the accommodation space and cooling the laser irradiation unit.

Irradiating module, and substrate treating apparatus including the same

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit configured to support and rotate a substrate at the treating space; a liquid supply unit configured to supply a liquid to a substrate supported on the support unit; a post-treating unit configured to perform a post-treatment on the substrate supported on the support unit; and a monitoring unit configured to inspect a state of a liquid film formed of the liquid supplied onto the substrate.

Apparatus for treating substrate and method for treating a substrate

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a high pressure chamber configured to form a treating space for performing a supercritical treating process therein; a substrate support unit configured to support a substrate at the treating space; a fluid supply unit configured to supply a treating fluid to the treating space; and an exhaust unit configured to exhaust an atmosphere of the treating space, and wherein the fluid supply unit comprises a cover plate opposite to a treating surface of a substrate supported by the substrate support unit, and having a supply hole for supplying the treating fluid to the treating surface.

Method and apparatus for treating substrate

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a substrate support unit configured to support a substrate in the treating space; and a fluid supply unit configured to supply a fluid in a supercritical state to the treating space, wherein the fluid supply unit comprises: a supply line provided at a top wall of the chamber; and a discharge unit installed at the top wall of the chamber and configured to discharge a fluid to a substrate, and wherein the discharge unit comprises: a body having a discharge fluid channel for the fluid; a nozzle plate provided at a discharge end of the body; and a blocking plate within the discharge fluid channel and spaced apart from the nozzle plate.

Apparatus for treating a substrate

The inventive concept provides a mask treating apparatus. The mask treating apparatus includes a support unit configured to support and rotate a mask, the mask having a first pattern within a plurality of cells thereof and a second pattern outside regions of the plurality of cells; a heating unit including a laser irradiation module and a moving module, the laser irradiation module having a laser irradiator for irradiating a laser light to the second pattern, the moving module configured to change a position of the laser irradiation module; and a controller configured to control the support unit and the heating unit, and wherein when a treating position is divided into four equal parts from a first quadrant to a fourth quadrant based on a center of the mask, the laser irradiator is positioned at the fourth quadrant and the first quadrant in a direction linearly moving from a standby position to the treating position, positioned at the third quadrant in a direction which is perpendicular to the fourth quadrant, and positioned at the second quadrant in a direction which is perpendicular to the first quadrant, and wherein the controller controls a rotation of the support unit so the second pattern is positioned at the fourth quadrant.

Apparatus and method for treating substrate

A photomask correction method capable of increasing the photomask precision is provided. The photomask correction method comprises measuring an intensity profile of a laser, acquiring etching amount data corresponding to the measured intensity profile using a library, determining a process parameter of the laser based on the etching amount data, and correcting a photomask with the laser according to the determined process parameter.

Apparatus for correcting photomask and method thereof

A substrate processing apparatus includes a process chamber including a first body and a second body that are coupled to each other to form a processing space therein, a clamping member configured to clamp the first body and the second body, and an anti-friction member mounted in a groove formed in a contact region between the first body or the second body and the clamping member.

Growing community of inventors

Seoul, South Korea

Hyo Won Yang