Samsung Electronics Co., Ltd.

Soulbrain Co., Ltd.

Enf Technology Co., Ltd.

Hyo-Sun Lee

Hoon Hee Han

Soojin Kim

Hoyoung Kim

Tae Soo Kwon

Jung Hun Lim

Jinhye Bae

Keonyoung Kim

Donghyun Kim

Myung Ho Lee

Jung-Min Oh

Ho-Young Kim

Dong-Min Kang

Hyosan Lee

Haksoo Kim

Young-taek Hong

Sung-bae Kim

Hong-kwon Youn

Jung Jae Oh

Embodiments of the inventive concepts provide a method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer. The method includes preparing a semiconductor substrate to which an adhesive layer adheres, removing the adhesive layer from the semiconductor substrate, and applying a cleaning composition to the semiconductor substrate to remove a residue of the adhesive layer. The cleaning composition includes a solvent including a ketone compound and having a content that is equal to or greater than 40 wt % and less thaadminn 90 wt %, quaternary ammonium salt, and primary amine.

Method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer

A pre-treatment composition for use before etching SiGe includes an acid, an alcohol, and a silane compound having a chemical formula R&#x2014;Si(R)(OR)in which R is (C3-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C3-C20)alkyl, or (C3-C20)alkyl(C6-C12)aryl, Ris hydrogen, hydroxyl, halogen, (C1-C20)alkyl, halo(C1-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C1-C20)alkyl, or (C1-C20)alkyl(C6-C12)aryl, Ris hydrogen, (C1-C20)alkyl, halo(C1-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C1-C20)alkyl, or (C1-C20)alkyl(C6-C12)aryl, n is an integer of 0 to 2, and the alkyl, aryl, arylalkyl, or alkylaryl of R, and the alkyl, haloalkyl, aryl, arylalkyl, or alkylaryl of Rmay be further substituted with at least one substituent selected from halogen, hydroxyl, &#x2014;N(R)(R), and &#x2014;S(R), where each of the R, the Rand the Ris independently hydrogen or (C1-C20)alkyl.

Pre-treatment composition before etching SiGe and method of fabricating semiconductor device using the same

Embodiments of the inventive concepts provide a method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer. The method includes preparing a semiconductor substrate to which an adhesive layer adheres, removing the adhesive layer from the semiconductor substrate, and applying a cleaning composition to the semiconductor substrate to remove a residue of the adhesive layer. The cleaning composition includes a solvent including a ketone compound and having a content that is equal to or greater than 40 wt % and less than 90 wt %, quaternary ammonium salt, and primary amine.

In a method of manufacturing an integrated circuit (IC) device, a photomask is wet-processed using a cleaning composition comprising an organic acid, an oxidizing agent, and deionized water (DIW).

Methods of manufacturing integrated circuit devices by using photomask cleaning compositions

Growing community of inventors

Hwaseong-si, South Korea

Hyo-Sun Lee