Samsung Electronics Co., Ltd.

Soulbrain Co., Ltd.

Lg Chem, Ltd

Korea Institute of Geoscience and Mineral Resources

Future-eng Co., Ltd.

Hyo Sun Lee

Jung Hun Lim

Yong Jae Choi

Soo Jin Kim

Jin Hye Bae

Ho Young Kim

Sang Won Bae

Min Goo Kim

Bun Yeoul Lee

Heon Yong Kwon

Dae Woo Nam

Hee Jung Kim

Dong Ryul Kim

Young Whan Park

Young Chul Won

Sung-Ho Cho

Sang Uk Ryu

Hyun-Key Jung

Boong Goon Jeong

Hyoung Rae Rim

Ki Yeon Hwang

Ju Eun Cha

Ho Jun Lee

Soo Yeon Lee

An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).

Etching composition and method for fabricating semiconductor device by using the same

An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (HPO), nitric acid (HNO), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HClO), silicic acid (HSiO), boric acid (HBO), acetic acid (CHCOOH), propionic acid (CHCOOH), lactic acid (CHCH(OH)COOH), and glycolic acid (HOCHCOOH).

An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (HPO), nitric acid (HNO), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HNO), silicic acid (HSiO), boric acid (HBO), acetic acid (CHCOOH), propionic acid (CHCOOH), lactic acid (CHCH(OH)COOH), and glycolic acid (HOCHCOOH).

Provided are an underwater detector and a method for an underwater detection, and more particularly, an underwater detector including two direct current electrodes and a plurality of measurement electrodes in order to sense a movement of an object having conductivity different from that of water underwater. Since the underwater detector according to the present invention includes two direct current electrodes, a plurality of measurement electrodes, and a control and measurement module for measuring voltages of the plurality of measurement electrodes, the plurality of measurement electrodes each include an electrode control module and the electrode control module includes a first switch, a second switch, a controlling unit, and the like, the number of voltage measurement lines may be small and a voltage between two selected electrodes may be easily calculated.

Underwater detector and method for underwater detection

Disclosed is an apparatus for exhausting impurities included in a fluid, the apparatus including: a filtering net installation body; an impurity filtering net body; a fluid inflow pipe; a fluid exhaust pipe; a ball valve; and an air chamber housing () detachably assembled with a connecting part (), which is inserted into and fixed to an inner periphery of an upper part of a hollow part () of the filtering net installation body (), wherein the air chamber housing () includes an assembling part () assembled with the connector () and a collector () which is formed integrally with the assembling part () so as to communicate with the assembling part () and allows compressed air to be collected into the collector (). In the apparatus, when a ball valve disposed at an intersection point between a fluid inflow pipe and a impurity exhaust pipe of a filtering net installation body is moved to a position where impurities is discharged so that supply of fluid is cut off, impurities piled up on the interior of the impurity exhaust pipe and fluid remaining therein are rapidly discharged outside through the impurity exhaust pipe due to pressure of compressed air collected into the interior of an air chamber housing positioned at an upper part of the filtering net installation body so that impurities are easily removed.

Impurities removal apparatus for a fluid inclusion

Disclosed are a negative C-type compensation film and a method of preparing the same. The negative C-type compensation film includes a) a base layer, and b) a polymer layer comprising polyarylate prepared by a method comprising the step of copolymerizing divalent phenols, divalent aromatic carboxylic acid halides, and allyl bisphenol derivatives, the base layer and the polymer layer being sequentially layered. The compensation film is capable of being used for the negative C-type compensation film without a stretching process, significantly reduces the thickness of the compensation film, and has significantly improved interlayer adhesion force in a multilayer structure.

Negative C-type compensation film and method of preparing the same

Provided are a bimetallic zinc complex and a method of producing polycarbonate, including polymerizing an epoxy compound and carbon dioxide using the bimetallic zinc complex. The bimetallic zinc complex according to the present invention has a distance between zinc-zinc atoms, which is maintained in a limited range regardless of its concentration in a reaction medium for the polymerization. Thus, the bimetallic zinc complex can have a polymerization activity even at a high ratio of monomer/catalyst, thereby reducing a catalyst amount to be used, which is economically advantageous. Further, the bimetallic zinc complex can produce a high molecular weight polycarbonate.

Bimetallic zinc complex and process of producing polycarbonate using the same as polymerization catalyst

Growing community of inventors

Daejeon, South Korea

Hyo Sun Lee