Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Samsung Sdi Co., Inc.

University of Toronto

Postech Research and Business Development Foundation

Hyo Sook Jang

Eun Joo Jang

Shin Ae Jun

Yuho Won

Tae Hyung Kim

Hyun A Kang

Jihyun Min

Soo Kyung Kwon

Yongwook Kim

Garam Park

Taekhoon Kim

Yong Wook Kim

Yong Seok Han

Shang Hyeun Park

Sungwoo Hwang

Kun Su Park

Sung Woo Kim

Tae Ho Kim

Tae Gon Kim

Jeong Hee Lee

Dae Young Chung

Moon Gyu Han

Oul Cho

Seon-Yeong Kim

Jin A Kim

Nayoun Won

Won Sik Yoon

Heejae Lee

Young Hwan Kim

Won Joo Lee

Kwanghee Kim

Jung Eun Lim

Chul Ho Jung

Ji Yeong Kim

Hyunki Kim

Fumiaki Kato

In Taek Han

Ankit Jain

Sjoerd Hoogland

Oleksandr Voznyy

Keigo Furuta

Na Youn Won

Makhsud I Saidaminov

Hwea Yoon Kim

Edward Hartley Sargent

Takahiro Fujiyama

Ha Il Kwon

Jooyeon Ahn

Ji-Yeong Kim

Jun-Mo Yoo

Masashi Tsuji

Tomoyuki Kikuchi

Tae Won Jeong

Naotoshi Suganuma

Yusaku Konishi

Hiroko Endo

Heejae Chung

Soonmin Cha

Soo-Kyung Kwon

Andrew Johnston

In-Taek Han

Jeongmin Kim

Jaejun Chang

Larissa Levina

Hyeyeon Yang

Hongkyu Seo

Mitsunori Ito

Yukika Yamada

Dae-hee Lee

Norihito Ishii

Kyuhyun Bang

Takao Motoyama

Seonmyeong Choi

Young Seok Park

Eun Hwa Lee

Sungjee Kim

Chil Hee Chung

Sang Eui Lee

Sanghyun Sohn

Edward H Sargent

Ilyoung Lee

Young-soo Jeong

Eunjae Lee

Anastasia Agnes

Hong Kyu Seo

Yong Ju Kwon

You Jung Chung

Petar Todorovic

Taekoon Kim

Ji Hyun Min

Provided is a compound represented by Chemical Formula 1 capable of manufacturing an EL device by inkjet printing. In Chemical Formula 1,

Compounds, liquid compositions including compounds, and electroluminescent devices

A quantum dot light-emitting device including first electrode and a second electrode, a quantum dot layer between the first electrode and the second electrode, a first electron transport layer and a second electron layer disposed between the quantum dot layer and the second electrode. The second electron transport layer is disposed between the quantum dot layer and the first electron transport layer, wherein each of the first electron transport layer and the second electron transport layer includes an inorganic material. A lowest unoccupied molecular orbital energy level of the second electron transport layer is shallower than a lowest unoccupied molecular orbital energy level of the first electron transport layer, and a lowest unoccupied molecular orbital energy level of the quantum dot layer is shallower than a lowest unoccupied molecular orbital energy level of the second electron transport layer. An electronic device including the quantum dot light-emitting device.

Quantum dot light-emitting device and electronic device

A quantum dot ink composition including a plurality of quantum dots, and a mixed solvent including a Solvent a and a Solvent b, the ink composition having a surface tension of about 30 mN/m to about 40 mN/m, where Solvent a is a cycloalkane compound with at least one ring carbon having a linear C4 to C16 alkyl group, and Solvent b is an aromatic hydrocarbon compound having a linear C2 to C12 alkyl group. A quantum dot electroluminescent device including a light emitting layer formed from the quantum dot composition.

Quantum dot ink composition, and quantum dot electroluminescent device

A method of manufacturing a light emitting device that includes providing a first electrode, forming a light emitting layer including quantum dots on the first electrode, forming an electron auxiliary layer on the light emitting layer, and forming a second electrode on the electronic auxiliary layer. The forming of the electron auxiliary layer includes forming an electron auxiliary layer including a plurality of metal oxide nanoparticles, and contacting the plurality of metal oxide nanoparticles with a base including a hydroxyl group (OH).

Light emitting device, method for manufacturing the same, and electronic device including the same

An electroluminescent device including an anode; a cathode; a light emitting layer disposed between the anode and the cathode; and an electron transport layer disposed between the light emitting layer and the cathode, wherein the light emitting layer includes a plurality of semiconductor nanoparticles, the electron transport layer includes zinc oxide nanoparticles including a Group IIA metal and an acid salt of an alkali metal that has an oxycarbonyl moiety, and the zinc oxide nanoparticles have an average size of less than or equal to about 20 nanometers (nm).

Electroluminescent device, production method thereof, and display device including the same

A semiconductor nanocrystal particle represented by Chemical Formula 1 and having a full width at half maximum (FWHM) of less than or equal to about 30 nanometers (nm) in the emission wavelength spectrum is provided:AA'DE.  Chemical Formula 1 In Chemical Formula 1, A is a first metal including Rb, Cs, or a combination thereof, A′ is an organic substance derived from an ammonium salt, an organic material derived from an organic ligand, or an organic material including a combination thereof, D is a second metal including Sb, Bi, or a combination thereof E is Cl, Br, I, or a combination thereof, 1<x≤3, −1<α<1, 3+α−x>0, −1<β<1, and −1<γ<1.

Semiconductor nanocrystal particle and production methods thereof

An electroluminescent display device includes first and second electrode facing each other; and a quantum dot emission layer disposed between the first and second electrodes, wherein the quantum dot emission layer includes a red emission layer disposed in a red pixel, a green emission layer disposed in a green pixel, and a blue emission layer disposed in a blue pixel, wherein the red emission layer includes red light emitting quantum dots, the green emission layer includes green light emitting quantum dots, the blue emission layer includes blue light emitting quantum dots, and wherein the blue emission layer is configured to exhibit first emission spectrum including a blue luminescent peak and a first luminescent peak different from the blue luminescent peak, wherein the green emission layer is configured to exhibit a second emission spectrum including a green luminescent peak and a second luminescent peak different from the green luminescent peak.

Electroluminescent display device including a red pixel, a green pixel, and a blue pixel

A cadmium free quantum dot including a core including a first semiconductor nanocrystal, and a semiconductor nanocrystal shell disposed on the core, a composition of the semiconductor nanocrystal shell being different from a composition of the first semiconductor nanocrystal, a production method thereof, and a device including the same are disclosed. The semiconductor nanocrystal shell includes a zinc chalcogenide, the zinc chalcogenide includes selenium, tellurium, sulfur, or a combination thereof, and the quantum dot further alkaline an alkaline earth metal.

Quantum dots and devices including the same

A light emitting device and a production method thereof. The light emitting device includes a light emitting layer including a plurality of quantum dots, and an electron auxiliary layer disposed on the light emitting layer, the electron auxiliary layer configured to transport electrons, inject electrons into the light emitting layer, or a combination thereof, wherein the electron auxiliary layer includes a plurality of metal oxide nanoparticles and a nitrogen-containing metal complex. The metal oxide nanoparticles include zinc and optionally a dopant metal, the dopant metal includes Mg, Co, Ga, Ca, Zr, W, Li, Ti, Y, Al, Co, or a combination thereof and a mole ratio of nitrogen to zinc in the electron auxiliary layer is greater than or equal to about 0.001:1.

Light emitting device, production method thereof, and display device including the same

A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.

Nanocrystal particles and processes for synthesizing the same

A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.

Cadmium free quantum dot including lithium, production method thereof, and electronic device including the same

A quantum dot having a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the surface of the core, the shell including zinc, selenium, and sulfur. The quantum dot is configured to emit green light, the quantum dot does not include cadmium, and the quantum dot has a mole ratio Te:Se of tellurium relative to selenium of greater than about 0.05 and less than or equal to about 0.5:1. A method of producing the quantum dot and an electronic device including the same.

Core shell quantum dot and electronic device including the same

A light source includes a light emitting element which emits light, and a light conversion layer which converts the light emitted from the light emitting element into white light and emits the white light, where the light conversion layer includes a resin and a quantum dot material mixed with the resin, and a red apex of a color region of the white light is positioned in a region of 0.65<Cx<0.69 and 0.29<Cy<0.3370 in color coordinates, and a green apex of a color region of the white light is positioned in a region of 0.17<Cx<0.31 and 0.61<Cy<0.70 in the color coordinates.

Light source, and back light unit and liquid crystal display including the light source

A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.

Quantum dots, production method thereof, and composite and electronic device including the same

A copolymer, including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, or a combination thereof: wherein R, R, R, X, X, and Arare as provided herein.

Copolymer, electroluminescence device material including copolymer, and electroluminescence device

Growing community of inventors

Suwon-si, South Korea

Hyo Sook Jang