Samsung Electronics Co., Ltd.

Hyo-Sig Won

Sang-Hoon Baek

Jung-Yun Choi

Jung-Ho Do

Seung-Young Lee

Sun-Young Park

Sang-Kyu Oh

Myung-Soo Jang

Kyung-Tae Do

Hyoun-Soo Park

Da-Yeon Cho

Seong-Min Ryu

Wook Hwan Kim

Tae-Joong Song

Young-hwan Kim

Jong-Ho Kim

Young-Hwan Kim

Jae-Ho Park

Jin-tae Kim

Yong-Seok Lee

Gi-young Yang

Hyung-ock Kim

Kwangok Jeong

Jun Seomun

Youngsoo Shin

Bong-hyun Lee

Bong-Hyun Lee

Jae-Han Jeon

Kee-Sup Kim

Byunghee Choi

A computer-implemented method includes placing standard cells based on design data defining an integrated circuit. A layout of the integrated circuit is generated by performing colorless routing. First, second, third and fourth patterns included in a quadruple patterning lithography (QPL) layer are arranged, based on space constraints, on the placed standard cells. The generated layout is stored to a computer-readable storage medium. The space constraints define minimum spaces between the first, second, third and fourth patterns. The method includes assigning first, second, third and fourth colors to the first, second, third and fourth patterns, respectively. Masks are generated based on the layout. A semiconductor device is manufactured by using the generated masks. A space between two patterns of the first, second, third and fourth patterns smaller than a corresponding space constraint of the space constraints indicates a color violation.

Computing system for performing colorless routing for quadruple patterning lithography

A computer-implemented method compresses placing standard cells based on design data defining an integrated circuit (IC). A layout of the IC is generated by performing colorless routing, by which a first pattern, a second pattern, and a third pattern in a triple patterning lithography (TPL) layer are arranged on the placed standard cells. The arrangement is based on space constraints. The generated layout is stored to a non-transitory computer-readable storage medium. The space constraints define minimum spaces between the first pattern, the second pattern, and the third pattern. A color violation does not occur between the first pattern, second pattern, and the third pattern. A first mask, a second mask, and a third mask are generated based on the layout. A semiconductor device is manufactured by using the generated first mask, the second mask, and the third mask.

Integrated circuit, and computing system and computer-implemented method for designing integrated circuit

A computer-implemented method of manufacturing an integrated circuit includes placing a plurality of standard cells that define the integrated circuit, selecting a timing critical path from among a plurality of timing paths included in the placed standard cells, and selecting at least one net from among a plurality of nets included in the timing critical path as at least one timing critical net. The method further includes pre-routing the at least one timing critical net with an air-gap layer, routing unselected nets, generating a layout using the pre-routed at least one timing critical net and the routed unselected nets, and manufacturing the integrated circuit based on the layout.

Integrated circuit and computer-implemented method of manufacturing the same

A standard cell library and a method of using the same may include information regarding a plurality of standard cells stored on a non-transitory computer-readable storage medium, wherein at least one of the plurality of standard cells includes a pin through which an input signal or an output signal of the at least one standard cell passes and including first and second regions perpendicular to a stack direction. When the via is disposed in the pin, the second region can provide a resistance value of the via smaller than that of the first region. The standard cell library may further include marker information corresponding to the second region.

Standard cell library and methods of using the same

An integrated circuit (IC) may include at least one cell including a plurality of conductive lines that extend in a first direction and are in parallel to each other in a second direction that is perpendicular to the first direction, first contacts respectively disposed at two sides of at least one conductive line from among the plurality of conductive lines, and a second contact disposed on the at least one conductive line and the first contacts and forming a single node by being electrically connected to the at least one conductive line and the first contacts.

Integrated circuit, semiconductor device based on integrated circuit, and standard cell library

In a method of designing a semiconductor device, a transistor included in a layout of the semiconductor device may be selected. A biasing data may be set for changing a characteristic of the selected transistor. A design rule check (DRC) process for the layout of the semiconductor device may be performed after ignoring the biasing data. An optical proximity correction (OPC) process for the layout of the semiconductor device may be performed based on the biasing data.

Methods of designing semiconductor devices and methods of modifying layouts of semiconductor devices

In a method of designing a system-on-chip including a tapless standard cell to which body biasing is applied, a slow corner timing parameter is adjusted to increase a slow corner of an operating speed distribution for the system-on-chip by reflecting forward body biasing, and a fast corner timing parameter is adjusted to decrease a fast corner of the operating speed distribution for the system-on-chip by reflecting reverse body biasing. The system-on-chip including the tapless standard cell is implemented based on the adjusted slow corner timing parameter corresponding to the increased slow corner and the adjusted fast corner timing parameter corresponding to the decreased fast corner. The slow corner timing parameter corresponds to a lowest value of an operating speed design window of the system-on-chip, and, the fast corner timing parameter corresponds to a highest value of the operating speed design window of the system-on-chip.

Method of designing a system-on-chip including a tapless standard cell, designing system and system-on-chip

In a method of estimating a leakage current in a semiconductor device, a chip including a plurality of cells is divided into segments by a grid model. Spatial correlation is determined as spatial correlation between process parameters concerned with the leakage currents in each of the cells. A virtual cell leakage characteristic function of a cell is generated by arithmetically operating actual leakage characteristic functions. A segment leakage characteristic function of a segment is generated by arithmetically operating the virtual cell leakage characteristic functions of all cells in the segment. Then, a full chip leakage characteristic function of the chip is generated by statistically operating the segment leakage characteristic functions of all segments in the chip. Accordingly, computational loads of Wilkinson's method for generating the full chip leakage characteristic function can remarkably be reduced.

Method of estimating a leakage current in a semiconductor device

A body biasing control circuit capable of being shared by a plurality of macro blocks and can independently control body voltages of a plurality of macro blocks. The body biasing control circuit includes a lookup table for storing a plurality of indexes where each index is associated with a body voltage appropriate for an operating state of a corresponding macro block. A control unit receives a corresponding index from the lookup table and generates a plurality of body voltages appropriate for an operating state of a macro block corresponding to the index and supplies the body voltages to the macro block.

Body biasing control circuit using lookup table and body biasing control method using same

A multi-threshold voltage complementary metal oxide semiconductor (MTCMOS) flip-flop, a circuit including the MTCMOS flip-flop, and a method of forming the MTCMOS flip-flop are disclosed. The MTCMOS flip-flop breaks a leakage current path during a sleep mode to retain an output data signal. The MTCMOS flip-flop typically further uses a data feedback unit to retain the output data signal.

MTCMOS flip-flop, circuit including the MTCMOS flip-flop, and method of forming the MTCMOS flip-flop

Multi-Threshold CMOS (MTCMOS) devices include a high threshold voltage current control switch that is responsive to a first control signal, a low threshold voltage logic circuit and a flip-flop that is configured to store data from the low threshold voltage logic circuit and that is responsive to a second control signal. A control circuit also is provided that is configured to change a logic state of the second control signal and then, after a first delay, to change a logic state of the first control signal, in response to the MTCMOS device entering a sleep mode. The control circuit is further configured to change the logic state of the first control signal and then, after a second delay that is different from the first delay, to change the logic state of the second control signal in response to the MTCMOS device entering an active mode. Related methods also are provided.

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Suwon-si, South Korea

Hyo-Sig Won