Semes Co., Ltd.

Hyo Seong Seong

Ogsen Galstyan

Jong Hwan An

Ja Myung Gu

Shin-Woo Nam

Soojin Lee

Tae Hoon Jo

Harutyun Melikyan

Jung Min Won

Il Gyo Koo

Byeung Geon Jeon

Ik-Jin Choi

Ji Hyun Kim

Proposed are a method and an apparatus for determining a cable length for plasma processing equipment. More particularly, proposed is a method of determining a length of a power supply cable for plasma processing equipment that performs plasma processing through power supply at radio frequencies (RF) of several tens of MHz or more.

Method and apparatus for determining cable length for plasma processing equipment

Provided are a plasma antenna and a plasma generating apparatus including the same. The plasma antenna includes a first antenna inducing electromagnetic fields by using an RF signal, a second antenna inducing electromagnetic fields by using the RF signal, and a capacitor connected between an input terminal of the first antenna and an input terminal of the second antenna.

Plasma antenna and apparatus for generating plasma having the same

A substrate treating apparatus is disclosed. The substrate treating apparatus may include a chamber having a treating space defined therein, a support unit for supporting the substrate in the treating space, a heater power source for applying electric power to a heater in the support unit, a high-frequency power source for applying high-frequency power to a lower electrode in the support unit, and a filter unit installed at a line for connecting the heater power source with the heater to prevent high-frequency inflow. The filter unit may include a housing, one or more coils in the housing, and an adjustment member disposed between the housing and the coil. The adjustment member may be made of a non-magnetic material. The adjustment member may be spaced from the coil at a predefined spacing, and spaced apart from an inner wall of the housing or in contact with the housing inner wall.

Filter unit, substrate treating apparatus including the same, and substrate treating method

An embodiment includes an apparatus for controlling temperature of a substrate, an apparatus for treating a substrate comprising the same, and a method of controlling the same, which may control the temperature of the substrate by each area and not increasing the volume of the apparatus. The substrate temperature control apparatus comprises: a support plate for supporting a substrate; a plurality of heating units placed in different area of the substrate and controlling a temperature of the substrate by each area; a power supply unit for providing a power to control the temperature of the substrate; a switch unit connected between the plurality of heating units and the power supply unit, and obtaining one or more of a transistor device; and a controller for controlling a power which is supplied to each heating units by controlling unit.

Method, system, and apparatus for controlling a temperature of a substrate in a plasma processing chamber

Growing community of inventors

Changwon-si, South Korea

Hyo Seong Seong