Samsung Electronics Co., Ltd.

Semes Co., Ltd.

Dongwoo Fine-Chem Co., Ltd.

Dongjin Semichem Co., Ltd.

Hyo San Lee

Mi Hyun Park

Hyun Jin Kim

Hoon Hee Han

Min Hee Cho

Jung-Min Oh

Young-Hoo Kim

Sang Won Bae

Jong Kyoung Park

Ji Soo Jeong

Ye Rim Yeon

Tae Keun Kim

Jung Min Oh

Hae Rim Oh

Yearin Byun

In Kwon Kim

Ga Young Song

Jung Youl Lee

Han Sol Lim

Min Ju Im

Hyo Joong Yoon

Min Hyung Cho

A chemical mechanical polishing method may include polishing a polishing object at a first temperature using a chemical mechanical polishing slurry; and removing the chemical mechanical polishing slurry on the polishing object at a second temperature different from the first temperature. The chemical mechanical polishing slurry may include abrasive particles, a thermoresponsive inhibitor, and deionized water. The thermoresponsive inhibitor may include a thermoresponsive polymer exhibiting a phase-transition between the first temperature and the second temperature. The thermoresponsive polymer may be adsorbed to the hydrophobic layer at the first temperature and desorbed from the hydrophobic layer at the second temperature.

Chemical mechanical polishing method and method for fabricating semiconductor device using the same

Etching compositions are provided. The etching compositions can be used for etching cobalt. The etching compositions may include a chelator, water, an oxidizer, and an organic solvent, and the chelator may include an organic acid, an amine compound and/or a polyhydric alcohol. Water may be present in an amount of 1 wt % to 10 wt % based on a total weight of the etching composition.

Etching compositions and methods for fabricating semiconductor devices by using the same

A substrate cleaning composition, a method of cleaning a substrate using the same, and a method of fabricating a semiconductor device using the same, the substrate cleaning composition including a styrene copolymer including a first repeating unit represented by Formula 1-1a and a second repeating unit represented by Formula 1-1b; an additive represented by Formula 2-1; and an alcoholic solvent having a solubility of 500 g/L or less in deionized water,

Substrate cleaning composition, method for cleaning substrate using the same, and method for fabricating semiconductor device using the same

A cleaning composition, a cleaning apparatus, and a method of fabricating a semiconductor device, the cleaning composition including a surfactant; deionized water; and an organic compound, wherein the surfactant is included in the cleaning composition in a concentration of about 0.28 M to about 0.39 M or a mole fraction of about 0.01 to about 0.017, and wherein the organic compound is included in the cleaning composition in a concentration of about 7.1 M to about 7.5 M or a mole fraction of about 0.27 to about 0.35.

Cleaning composition, cleaning apparatus, and method of fabricating semiconductor device using the same

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Hyo San Lee