Samsung Electronics Co., Ltd.

Dongwoo Fine-chem

Pukyong National University

Soulbrain Co., Ltd.

Ehwa Diamond Industrial Co., Ltd.

Hyo-San Lee

Kun-Tack Lee

Jung-Min Oh

Young-Hoo Kim

Ji-Hoon Jeong

Bo-un Yoon

Chang-ki Hong

Yong-Sun Ko

Jeong-Nam Han

Woo-Gwan Shim

In-Gi Kim

Dae-Hyuk Kang

Chang-Ki Hong

Kwon-Taek Lim

Il-Sang Lee

Ha-Soo Hwang

Haldorai Yuvaraj

Jae-Mok Jung

Sang-jun Choi

Sang-tae Kim

Ji-Hoon Cha

Yong-Jhin Cho

Seok-Hoon Kim

Im-Soo Park

Dong-Gyun Han

Kyong-ho Lee

Chang-Gil Ryu

Seong-min Kim

Sang-won Bae

Mi-Hyun Park

Sang-Won Bae

Na-Rim Kim

Hoon Hee Han

Young-chan Kim

Sang-Jin Hyun

Dong-Seok Lee

Yong-Jun Choi

Jung-Won Lee

Hoon-Joo Na

Keun-Hee Bai

Dong-Chul Kim

Tae-Hong Kim

Hyung-seok Hong

Hag-ju Cho

Hyung-Ho Ko

Go-Un Kim

Kyoung-hwan Kim

So-Ra Han

Seong-Ho Moon

Jung-hun Lim

Joo-han Lee

Yong-Myung Jun

Seh-kwang Lee

Jin-uk Lee

Hung-ho Ko

Myung-ki Hong

Yung-jun Kim

Sung-oh Park

Kyu-min Oh

Sun-gyu Park

Chan-ki Yang

Kyoung-Seob Kim

Jung-ah Kim

Ik-hee Kim

Myung-Kook Park

Ho-Seok Yang

A method of processing substrates, comprising: loading a substrate into a process chamber; supplying a supercritical fluid, that is a process fluid under the supercritical state, into the process chamber, chemicals separated from the substrate and the supercritical fluid being mixed into a supercritical mixture in the process chamber; and gradually decreasing a chemical concentration of the supercritical mixture by alternately repeating a pressure drop mode and a supplemental mode such that the supercritical mixture partially flows out from the process chamber at the pressure drop mode when an inner pressure of the process chamber reaches a first pressure and the supercritical fluid turbulently flows into the process chamber at the supplemental mode when the inner pressure of the process chamber reaches a second pressure that is smaller than the first pressure and over a supercritical pressure of the process fluid.

Method of removing chemicals from a substrate

An etchant composition and a method of fabricating a semiconductor device, the composition including an inorganic acid; about 0.01 parts by weight to about 0.5 parts by weight of colloidal silica; about 0.01 parts by weight to about 30 parts by weight of an ammonium-based additive; and about 20 parts by weight to about 50 parts by weight of a solvent, all parts by weight being based on 100 parts by weight of the inorganic acid.

Etchant composition and method of fabricating semiconductor device

A composition for removing photoresist, including an alkyl ammonium fluoride salt in an amount ranging from about 0.5 weight percent to about 10 weight percent, based on a total weight of the composition; an organic sulfonic acid in an amount ranging from about 1 weight percent to about 20 weight percent, based on the total weight of the composition; and a lactone-based solvent in an amount ranging from about 70 weight percent to about 98.5 weight percent, based on the total weight of the composition.

Compositions for removing photoresist

A method of processing substrates, comprising: loading a substrate into a process chamber; supplying a supercritical fluid, that is a process fluid under a supercritical state, into the process chamber, chemicals separated from the substrate and the supercritical fluid being mixed into a supercritical mixture in the process chamber; and gradually decreasing a chemical concentration of the supercritical mixture by alternately repeating a pressure drop mode and a supplemental mode such that the supercritical mixture partially flows out from the process chamber at the pressure drop mode when an inner pressure of the process chamber reaches a first pressure and the supercritical fluid turbulently flows into the process chamber at the supplemental mode when the inner pressure of the process chamber reaches a second pressure that is smaller than the first pressure and over a supercritical pressure of the process fluid.

Method of treating substrates using supercritical fluids

A source supplier includes a source reservoir that contains a liquefied source fluid for a supercritical process, a vaporizer that vaporizes the liquefied source fluid into a gaseous source fluid under high pressure, a purifier that removes organic impurities and moistures from the gaseous source fluid and an analyzer connected to the purifier that analyzes an impurity fraction and a moisture fraction in the gaseous source fluid. Moisture and organic impurities are removed from the source fluid to reduce the moisture concentration of the supercritical fluid in the supercritical process.

Source supplier for a supercritical fluid, substrate processing apparatus having the same

A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.

Spot heater and device for cleaning wafer using the same

A chemical mechanical polishing (CMP) method includes preparing a polishing pad, determining a first load to be applied to a conditioning disk during conditioning of the polishing pad and a first indentation depth at which tips of the conditioning disk are inserted into the polishing pad when the first load is applied to the conditioning disk, preparing a conditioning disk, and positioning the conditioning disk on the polishing pad and conditioning a surface of the polishing pad by using the conditioning disk while applying the first load to the conditioning disk.

Preparing conditioning disk for chemical mechanical polishing and chemical mechanical polishing method including the same

In a method of cleaning a substrate, a protecting liquid may be sprayed to a surface of the substrate from a first position in a first spray direction. Cleaning droplets may be injected on to the surface of the substrate. The protecting liquid may be sprayed to the surface of the substrate from a second position different from the first position in a second spray direction. For example, the protecting liquid may be always sprayed from the central portion toward the edge portions in the substrate so that the protecting liquid on the substrate may have a uniform thickness.

Method of cleaning a substrate and apparatus for performing the same

A chemical liquid supply apparatus includes a nozzle unit including a nozzle arm and an injection nozzle mounted in an end of the nozzle arm, a chemical liquid supply unit including a first chemical liquid tank accommodating a first chemical liquid and a second chemical liquid tank accommodating a second chemical liquid, and supplying the first chemical liquid and the second chemical liquid to the nozzle unit, and a mixer unit provided in the nozzle unit and discharging a process fluid by mixing the first chemical liquid and the second chemical liquid, wherein the mixer unit includes an in-line mixer mixing the first chemical liquid and the second chemical liquid that are continually injected from the chemical liquid supply unit, and a mixer pipe extending from the in-line mixer to the injection nozzle.

Chemical liquid supply apparatus and semiconductor processing apparatus having the same

Disclosed are an apparatus for treating a substrate and a method of treating substrates. The apparatus includes an inlet valve through which a supercritical fluid flows into the process chamber until an inner pressure of the process chamber reaches a first pressure and a turbulent flow generator turbulently supplementing the supercritical fluid into the process chamber until the inner pressure of the process chamber is recovered to the first pressure. A pressure drop module partially removes a supercritical mixture from the process chamber until the inner pressure of the process chamber is dropped to the second pressure. A pressure drop mode and a supplemental mode may be alternately repeated by the flow controller.

Apparatus for treating substrates using supercritical fluids, substrate treatment system including the same and method of treating substrates using the same

Methods of manufacturing semiconductor devices using a composition for removing photoresist and methods of removing photoresist from a semiconductor substrate

Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.

Apparatus for treating wafers using supercritical fluid

A cleaning solution composition includes an organic solvent in which a metal fluoride does not dissolve, at least one fluoride compound that generates bifluoride (HF), and deionized water, wherein the deionized water may be included in a concentration of 1.5 wt % or lower based on the total weight of the cleaning solution composition.

Cleaning solution composition and method of cleaning semiconductor device using the same

In a supercritical fluid method a supercritical fluid is supplied into a process chamber. The supercritical fluid is discharged from the process chamber as a supercritical fluid process proceeds. A concentration of a target material included in the supercritical fluid discharged from the process chamber is detected during the supercritical fluid process. An end point of the supercritical fluid process may be determined based on a detected concentration of the target material.

Substrate processing method and substrate processing system for performing the same

Growing community of inventors

Suwon-si, South Korea

Hyo-San Lee