University-industry Cooperation Group of Kyung Hee University

Adrc. Co. Kr

Seerslab, Inc.

Hyo Min Kim

Jin Hee Jang

Eun Sa Hwang

Jeong Gi Kim

Chae Yeon Hwang

Jae Cheol Kim

Jin Wook Chong

Soon Ho Choi

Jun Hwan Jang

Disclosed are a crystallization process of an oxide semiconductor, a method of manufacturing a thin film transistor including the same, a thin film transistor, a display panel, and an electronic device. The crystallization process of an oxide semiconductor includes forming an amorphous oxide semiconductor layer on a substrate, forming a crystallization auxiliary layer including a light absorbing inorganic material on the amorphous oxide semiconductor layer, and annealing the crystallization auxiliary layer to crystallize the amorphous oxide semiconductor layer.

Crystallization process of oxide semiconductor, and method of manufacturing thin film transistor, a thin film transistor, a display panel, and an electronic device

Disclosed are a structure of a quantum-dot light emitting device including a charge generation junction layer and a method of fabricating the quantum-dot light emitting device. A quantum-dot light emitting device according to an embodiment of the present invention includes a negative electrode, a first charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, a quantum-dot light emitting layer, a hole transport layer, a second charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, and a positive electrode. The first and second charge generation junction layers is formed using a solution process. Accordingly, charge generation and injection can be stabilized, a process time can be shorted, and problems in the work function a positive or a negative electrode of a quantum-dot light emitting device can be addressed.

Quantum-dot light emitting device comprising solution processed charge generation junction and manufacturing method thereof

The present invention discloses a thin-film light-emitting device including a charge generating junction layer and a method of fabricating the thin-film light-emitting device. The thin-film light-emitting device including a charge generating junction layer according to one embodiment of the present invention includes a negative electrode; at least one light-emitting unit formed on the negative electrode and including a charge generating junction layer, an electron injection/transport layer, a thin-film light-emitting layer, and a hole injection/transport layer in a sequential order; and a negative electrode formed on the light-emitting unit. In the thin-film light-emitting device of the present invention, the charge generating junction layer has a layer-by-layer structure in which a p-type semiconductor layer and an n-type semiconductor layer are formed, and the concentration of oxygen vacancies at the interface between the p-type and n-type semiconductor layers is adjusted by annealing the n-type semiconductor layer.

Thin-film light-emitting device including charge generating junction layer and method of fabricating thin-film light-emitting device

Provided is a method of generating a three-dimensional (3D) avatar from a two-dimensional (2D) image. The method may include obtaining a 2D image by capturing a face of a person, detecting a landmark of the face in the obtained 2D image, generating a first mesh model by modeling a 3D geometrical structure of the face based on the detected landmark, extracting face texture information from the obtained 2D image, determining a second mesh model to be blended with the first mesh model in response to a user input, wherein the first mesh model and the second mesh model have the same mesh topology, generating a 3D avatar by blending the first mesh model and the second mesh model, and applying, to the 3D avatar, a visual expression corresponding to the extracted face texture information.

Method, apparatus, and system generating 3D avatar from 2D image

The present invention provides a light emitting element using a charge generating layer formed through a solution process and a method for manufacturing the same. The present invention provides a light emitting element comprising a positive electrode, a negative electrode, a light emitting layer, and a charge generating layer, the light emitting element being characterized in that the charge generating layer has a p-type layer, which comprises an organic semiconductor, and an n-type layer, which comprises an oxide semiconductor, formed in a layer-by-layer structure through a solution process.

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Seoul, South Korea

Hyo Min Kim