Lg Innotek Co., Ltd.

Hyo Kun Son

Tae Yun Kim

Kyung Jun Kim

Dae Sung Kang

Suk Hun Lee

Hyung Jo Park

Provided is a light emitting device, which includes a second conductive type semiconductor layer, an active layer, a first conductive type semiconductor layer, and a intermediate refraction layer. The active layer is disposed on the second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed on the active layer. The intermediate refraction layer is disposed on the first conductive type semiconductor layer. The intermediate refraction layer has a refractivity that is smaller than that of the first conductive type semiconductor layer and is greater than that of air.

Light emitting device and light emitting device package

Provided are a semiconductor light emitting device. The semiconductor light emitting device comprises a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; a third semiconductor layer disposed on the second semiconductor layer; and a fourth semiconductor layer disposed on the third semiconductor layer. The second semiconductor layer is formed of an InAlGaN semiconductor layer, the third semiconductor layer is formed of an AlGaN semiconductor layer, and the fourth semiconductor layer is formed of a GaN semiconductor layer.

Semiconductor light emitting device having a plurality of semiconductor layers having P-type dopant

A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant.

Semiconductor light emitting device and method for manufacturing the same

A light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system are disclosed. The light emitting device may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers. The first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer may include Al. The second conductive semiconductor layer may have Al content higher than Al content of the first conductive semiconductor layer. The first conductive semiconductor layer may have Al content higher than Al content of the active layer.

Light emitting device for improving a light emission efficiency

Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer.

Semiconductor light emitting device and method of manufacturing the same

Light emitting device and light emitting device package for improving a light emission efficiency

A wafer recycling method comprises varying a temperature and pressure conditions to remove a first semiconductor layer deposited on a wafer, removing a remaining semiconductor layer on the wafer through a chemical or physical process, and washing the wafer.

Wafer recycling method

A light emitting device includes a second metal layer, a second semiconductor layer on the second metal layer, an active layer on the second semiconductor layer, a first semiconductor layer on the active layer, a first metal layer on the first semiconductor layer, an insulating layer between the second metal layer and the second semiconductor layer at a peripheral portion of an upper surface of the second metal layer, and a passivation layer surrounding lateral surfaces of the insulating layer, the second semiconductor layer, the active layer, and the first semiconductor layer, the passivation layer being on the second metal layer, wherein a lateral surface of the insulating layer is adjacent to a lateral surface of the second metal layer, and wherein a lowermost surface of the passivation layer is disposed lower than a lowermost surface of the insulating layer.

Light emitting device

Provided is a light emitting device, which includes a first conductive type semiconductor layer, an active layer, a roughness pattern, and a second conductive type semiconductor layer. The active layer is disposed on the first conductive type semiconductor layer. The roughness pattern is disposed on the active layer. The second conductive type semiconductor layer is disposed on the roughness pattern and the active layer, and includes a metal oxide.

Light emitting device including second conductive type semiconductor layer and method of manufacturing the light emitting device

Semiconductor light emitting device having a high resistive layer

A light emitting device may include a first conductive semiconductor layer, an active layer adjacent to the first conductive semiconductor layer and a second conductive semiconductor layer adjacent to the active layer. The active layer may include a first quantum well layer, a second quantum well layer and a barrier layer between the first quantum well layer and the second quantum well layer. The first quantum well layer may include a first plurality of sub-barrier layers and a first plurality of sub-quantum well layers, and the second quantum well layer may include a second plurality of sub-barrier layers and a second plurality of sub-quantum well layers. A bandgap of the first quantum well layer may be different than a bandgap of the second quantum well layer.

Light emitting device, light emitting device package, method of manufacturing light emitting device and lighting system

A semiconductor light emitting device and a light emitting apparatus having the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate, a light emitting structure disposed on the substrate and comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a second electrode electrically connected to the second conductive type semiconductor layer, a plurality of first electrodes disposed on a plurality of sidewalls of the first conductive type semiconductor layer, and wherein the plurality of first electrodes are spaced apart from each other.

Semiconductor light emitting device and light emitting apparatus having the same

Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a first active layer, a second active layer, an electron barrier layer on the first conductive type semiconductor layer. The first active layer and the second active layer comprise a quantum well layer and a quantum barrier layer. The electron barrier layer is formed between the first active layer and the second active layer. The second conductive type semiconductor layer is formed on the active layer.

Growing community of inventors

Gwangju, South Korea

Hyo Kun Son