Ls Mtron Ltd.

Samsung Electronics Co., Ltd.

Hyo-jung Kim

Jung-Hwan Oh

Sang-Heon Lee

Hyung-tai Kim

Young-sun Kim

Hyeon-Deok Lee

Chang-Hoon Lee

Beom-jun Jin

Kong-Soo Lee

Eun-ae Chung

Young-sub You

U-in Chung

Ki-hyun Hwang

Yong-Woo Hyung

Hee-Seok Kim

Seok-woo Nam

Won-sik Shin

Chul-hwan Choi

Dae-Han Yoo

A transmission for a tractor has a main transmission part between a forward/reverse transmission part and a sub transmission part. The main transmission part has a driving shaft, a first sub shaft parallel with the driving shaft, a second sub shaft parallel with the first sub shaft, an output shaft arranged between the first sub shaft and the second sub shaft, first and second driving gears installed spaced to a distance from each other, third and fourth driving gears installed spaced to a distance from each other, a first output gear installed on the output shaft, a second output gear installed on the output shaft, a first clutch arranged between the first driving gear and the second driving gear, and a second clutch arranged between the third driving gear and the fourth driving gear.

Transmission for tractor

A transmission for a tractor has an input shaft receiving power from an engine, an idle shaft disposed parallel with the input shaft, an output shaft disposed parallel with the idle shaft and transmitting power to a main transmission part, forward/reverse driving gears installed on the input shaft so as to rotate idle, a forward/reverse clutch installed between the forward driving gear and the reverse driving gear to selectively connect the forward driving gear or the reverse driving gear to the input shaft, a forward driven gear installed on the idle shaft and engaged with the forward driving gear, a reverse driven gear installed on the idle shaft and engaged with the reverse driving gear, high speed/low speed driving gears installed between the forward driven gear and the reverse driven gear so as to rotate idle, a high speed/low speed clutch installed between the high speed driving gear and the low speed driving gear to selectively connect the high speed driving gear or the low speed driving gear to the idle shaft, and high speed/low speed driven gears installed on the output shaft and engaged with the high speed driving gear and the low speed driving gear, respectively.

A transmission for a tractor has a forward/reverse transmission unit for selectively changing a rotational direction of power of a first shaft connected with an engine and transmitting the power to a second shaft connected with an axle shaft, a main transmission unit installed between the second shaft and the axle shaft and having a plurality of gears to speed-change the power transmitted from the second shaft in four-speed, and a sub-transmission unit installed between the main transmission unit and the axle shaft and having a plurality of gears to speed-change again the power transmitted from the main transmission unit in four-speed. The transmission realizes forward/reverse 16-speed while having a compact structure.

A recessed gate electrode structure includes a first recess and a second recess in communication with the first recess both formed in a substrate. The second recess is larger than the first recess. A gate dielectric layer is formed on a top surface of the substrate and on an inner surface of the first and second recesses. A first polysilicon layer fills the first recess and is doped with impurities at a first impurity density. A second polysilicon layer fills the second recess and is doped with the impurities at a second impurity density. A void is defined within the second polysilicon layer. A third polysilicon layer is formed on the gate dielectric and first polysilicon layers and is doped with the impurities at a third impurity density. Due to impurities in the second polysilicon layer, migration of the void within the second recess may be substantially prevented.

Recessed gate electrode and method of forming the same and semiconductor device having the recessed gate electrode and method of manufacturing the same

A capacitor of a semiconductor device includes a cylinder type capacitor lower electrode, a dielectric layer, and an upper electrode. The upper electrode includes a metallic layer on the dielectric layer and a doped polySiGelayer stacked on the metallic layer. Methods of forming these capacitors also are provided.

Methods of forming capacitors of semiconductor devices including silicon-germanium and metallic electrodes

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Gyeonggi-do, South Korea

Hyo-jung Kim