Skhynix Inc.

Mtekvision Co., Ltd.

Samsung Electronics Co., Ltd.

Hyo-June Kim

Jae-Geun Oh

Chi-Ho Kim

Hyun-Seok Kang

Kee-Jeung Lee

Beom-Yong Kim

Seung-Beom Baek

Wan-Gee Kim

Jong-Chul Lee

Sung-Kyu Min

Ja-Chun Ku

Byung-Jick Cho

Won-Ki Ju

Hyun-Kyu Kim

Ji-Young Kim

Chang-Sub Lee

Sang-jun Park

Su-Jin Chae

Jeong-Man Han

Chul-Min Park

Sung-Yeob Cho

Min-Seon Kang

An electronic device includes a semiconductor memory. A method for fabricating the electronic device includes forming a first memory cell extending vertically from a surface of substrate and having a first upper portion that protrudes laterally, forming a second memory cell extending vertically from the surface of the substrate and having a second upper portion that protrudes laterally towards the first upper portion, and forming a liner layer over the first and second memory cells, the liner layer having a first portion disposed over the first upper portion and a second portion disposed over the second upper portion, the first and second portions of the liner layer contacting each other.

Electronic device and method for fabricating the same

This technology provides an electronic device and a method for fabricating the same. An electronic device in accordance with an implementation of this document may include a substrate including a first portion in a first region and a second portion in a second region; a plurality of memory cells disposed over the first portion of the substrate; a first insulating layer extending over the second portion of the substrate and at least partially filling a space between adjacent ones of the plurality of memory cells; and a second insulating layer disposed over the first insulating layer. The first insulating layer has a dielectric constant smaller than that of the second insulating layer, a thermal conductivity smaller than that of the second insulating layer, or both.

A semiconductor memory may include: a first stacked structure including a first word line disposed over a substrate and extended in a first direction, a first bit line disposed over the first word line and extended in a second direction crossing the first direction, and a first variable resistance layer interposed between the first word line and the first bit line; and a second stacked structure including a second bit line disposed over the first stacked structure and extended in the second direction, a second word line disposed over the second bit line and extended in the first direction, and a second variable resistance layer interposed between the second word line and the second bit line; and a first selecting element layer interposed between the first bit line and the second bit line.

Electronic device

A semiconductor device includes a first conductive layer, a second conductive layer spaced from the first conductive layer, a variable resistance layer interposed between the first and second conductive layers, and an impurity-doped layer provided over a side surface of the variable resistance layer. The variable resistance layer has a smaller width than the first and the second conductive layers.

Semiconductor device and electronic device including the same

According to embodiments, a semiconductor memory may include: a variable resistance pattern disposed over a substrate and extended in a first direction; first and second structures including a plurality of interlayer dielectric layers and a plurality of conductive layers which are alternately stacked over the substrate, and contacted with one side surface and the other side surface of the variable resistance pattern, respectively, wherein the first stacked structure has a line shape extended in a first direction and the second stacked structure has a pillar shape; and a pillar-shaped conductive pattern contacted with one side surface of the second stacked structure, which is not contacted with the variable resistance pattern.

Dual display control device and method using an RGB interface are provided. A dual display control device controlling a first display device and a second display device using an RGB interface includes: a synchronization signal output unit that outputs vertical and horizontal synchronization signals to the first display device and the second display device; and a data output unit that outputs first data to the first display device in a first section of a first pixel clock and outputs second data to the second display device in a second section of a second pixel clock, in accordance with the vertical and horizontal synchronization signal via a data line shared by and connected to the first display device and the second display device. Accordingly, it is possible to reduce the number of signal lines, thereby embodying an efficient hardware configuration.

Apparatus and method for controlling dual display device using RGB interface

A multimedia data reproducing device is provided which includes: a codec converting digital data into an analog signal by a predetermined method and reproducing the analog signal; and a control unit including a core generating a reproduction block by decoding multimedia data and outputting the generated reproduction block to a main memory in an activated state and an interface transmitting the reproduction block stored in the main memory as the digital data to the codec and transmitting the multimedia data stored in an auxiliary memory to the core in an activated state. Accordingly, it is possible to efficiently reproduce multimedia data to reduce the power consumption of a battery by alternately turning on and off a power source of blocks other than the interface in the control unit periodically or depending on a predetermined situation.

Apparatus and method for playing multimedia data

A transistor including an active region and methods thereof. The active region may include corners with at least one of a rectangular, curved or rounded shape. The methods may include isotropically etching at least a portion of the active region such that the portion includes a desired shape.

Growing community of inventors

Seoul, South Korea

Hyo-June Kim