Samsung Electronics Co., Ltd.

Snu Rdb Foundation

Amotron Co., Ltd.

Amecs Co., Ltd.

Hyo-Jong Lee

Gil-heyun Choi

Byung-Kyu Kim

Seung-man Choi

Sang-bum Kang

Kyu-Won Kim

Kug-Sun Hong

Bum Ju Ahn

Kyoung-woo Lee

Sang-rok Hah

Kyung-Tae Lee

Soo-geun Lee

Hong-Seong Son

Jeong-Hoon Ahn

Bong-Seok Suh

Ui-hyoung Lee

Sung-Bae Lee

Yi-Gwon Kim

Sang-Rok Ha

In-Ryong Kim

Hyuk-Joon Youn

The present invention relates to a composition comprising a Ninjurin1 expression or activity inhibitor for the prevention and treatment of inflammatory disease. Ninjurin1 protein is specifically expressed in macrophages around blood vessels, increases cell-cell adhesion and cell-matrix adhesion, increases expressions of Wntb (Wingless-type MMTV integration site family, memberB) and Ang(angiopoietin-2), but reduces expression of Angto induce apoptosis of vascular endothelial cells. In addition, Ninjurin1 protein is up-regulated when inflammation is induced and induces iNOS expression as well as increased NO generation. Therefore, the Ninjurin1 protein expression or activation inhibitor can be effectively used as an active ingredient of a composition for the prevention and treatment of inflammatory disease.

Composition comprising expression or activity inhibitors of Ninjurin1 for the prevention and treatment of inflammatory disease

The present invention relates to a composition comprising a Ninjurin1 expression or activity inhibitor for the prevention and treatment of inflammatory disease. Ninjurin1 protein is specifically expressed in macrophages around blood vessels, increases cell-cell adhesion and cell-matrix adhesion, increases expressions of Wnt7b (Wingless-type MMTV integration site family, member 7B) and Ang2 (angiopoietin-2), but reduces expression of Ang1 to induce apoptosis of vascular endothelial cells. In addition, Ninjurin1 protein is up-regulated when inflammation is induced and induces iNOS expression as well as increased NO generation. Therefore, the Ninjurin1 protein expression or activation inhibitor can be effectively used as an active ingredient of a composition for the prevention and treatment of inflammatory disease.

Composition comprising expression or activity inhibitors of ninjurin1 for the prevention and treatment of inflammatory disease

An inductor for a system-on-a-chip and a method for manufacturing the inductor are disclosed. The inductor comprises a conductive line formed by connecting a plurality of conductive patterns grown from a seed layer formed on a lower wiring. The method comprises using an electrolytic plating process or an electroless plating process to grow the plurality of adjacent conductive patterns from the seed layer until they become connected. The method also enables adjusting the height and width of the conductive line to desired levels.

Inductor for a system-on-a-chip and a method for manufacturing the same

Methods of forming a metal layer in integrated circuit devices using selective electroplating in a recess are disclosed. In particular, a recess is formed in a surface of an insulating layer. The recess has a side wall inside the recess, a bottom inside the recess, and an edge at a boundary of the surface of the insulating layer and the side wall. A selective electroplating mask is formed on the side wall to provide a covered portion of the side wall and an exposed portion of the side wall. The exposed portion of the side wall can be electroplated with a metal. Related conductive contacts are also disclosed.

Methods of forming metal layers in integrated circuit devices using selective deposition on edges of recesses

A method of chemical mechanical polishing that polishes a substrate by abrading a target material formed on the substrate with a polishing pad containing a slurry includes setting a polishing end time, at which time a predetermined thickness of the target material will have been removed from the substrate by polishing, polishing the substrate to remove the predetermined thickness of the target material, and increasing a level of byproduct contamination in the polishing pad to decrease a polishing rate, while polishing the substrate, so that the polishing rate decreases to approximately zero at the polishing end time.

Method of chemical mechanical polishing

A metal interconnection structure includes a lower metal interconnection layer disposed in a first inter-layer dielectric layer. An inter-metal dielectric layer having a via contact hole that exposes a portion of surface of the lower metal layer pattern is disposed on the first inter-layer dielectric layer and the lower metal layer pattern. A second inter-layer dielectric layer having a trench that exposes the via contact hole is formed on the inter-metal dielectric layer. A barrier metal layer is formed on a vertical surface of the via contact and the exposed surface of the second lower metal interconnection layer pattern. A first upper metal interconnection layer pattern is disposed on the barrier metal layer, thereby filling the via contact hole and a portion of the trench. A void diffusion barrier layer is disposed on the first metal interconnection layer pattern and a second upper metal interconnection layer pattern is disposed on the void diffusion barrier layer to completely fill the trench.

Void-free metal interconnection structure and method of forming the same

Methods of forming metal layers in integrated circuit devices using selective deposition on edges of recesses and conductive contacts so formed

Provided with a dielectric ceramic composition for microwaves having the formula represented by yMgTa.sub.2-x O.sub.6-5/2x +(1-y)ZnNb.sub.2 O.sub.6 +wC, wherein 0&lt;x.ltoreq.0.8, 0.1.ltoreq.y.ltoreq.1, 0.ltoreq.w.ltoreq.2 wt %, and C is at least one selected from a group consisting of Sb.sub.2 O.sub.5, CuO, ZnO, NiO, MgO, SrCO.sub.3, BaCO.sub.3, ZrO.sub.2, WO.sub.3, and TiO.sub.2, the composition having a low permittivity of 20-30, a quality factor almost equal to that of Ba(Zn,Ta)O.sub.3 families, and a relatively excellent sintering characteristic, thus particularly suitable for dielectric resonators in a high frequency band above 10 GHz.

Dielectric ceramic compositions

A dielectric ceramic composition for microwave applications consists essentially of the compound having a formula B'B.sub.2 'O.sub.6, wherein B' is at least one metal selected from the group of Mg, Ca, Co, Mn,Ni and Zn, and wherein B' is one of Nb or Ta, and additionally includes at least one compound selected from the group of CuO, V.sub.2 O.sub.5, La.sub.2 O.sub.3, Sb.sub.2 O.sub.5, WO.sub.3, MnCO.sub.3, MgO, SrCO.sub.3, ZNO, and Bi.sub.2 O.sub.3 as an additive, wherein the amount of the additive is 0.05% to 2.0% by weight of the total weight of the composition.

Dielectric ceramic composition

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Seoul, South Korea

Hyo-Jong Lee