Lg Electronics Inc.

Samsung Electronics Co., Ltd.

Hyo Jin Nam

Young Sik Kim

Nho Kyung Hong

Jae Joon Hwang

Sun Young Yi

June Seok Kim

Provided is a method for displaying information in a mobile terminal having an Electro-Luminescence (EL) region. The method includes determining whether a request for setting an item to be displayed on the EL region is input in a state in which the mobile terminal is in an EL display mode; if a request is input, setting an item to be displayed on the EL region; and displaying contents corresponding to the set item on the EL region in the EL display mode. The method allows information related to a mobile terminal to be consistently displayed at a preset position while performing a specific function of the mobile terminal, thus enabling simultaneous display of the specific function and of information stored in the mobile terminal.

Method for displaying information in mobile terminal

Device for writing and reading a data including a floated cantilever part connected to a support, a resistively heated tip at an end of the cantilever part, and a piezoelectric sensor formed on the cantilever part, thereby preventing an occurrence of a sensing error by reading a data and reducing power consumption by using a piezoelectric sensor, and tip wear by making heights of the cantilever array uniform by using piezoelectric actuators.

Device for writing and reading data by using cantilever

Cantilever for a scanning probe microscope (SPM) including a substrate having a tip, a piezoactuator on the substrate movable in response to an external electric signal, and a sensor formed around the piezoactuator so as not to overlap with the piezoactuator, thereby minimizing inner couplings.

Cantilever for scanning probe microscope

Method for fabricating a nonvolatile ferroelectric memory, including the steps of (1) forming an insulating layer, a semiconductor layer, an etch stop layer, a lower electrode, a ferroelectric layer, and an upper electrode on a substrate in succession, (2) forming an etch mask pattern of a required form on the upper electrode, (3) using the etch mask pattern as a mask in subjecting the upper electrode, the ferroelectric layer, the lower electrode, the etch stop layer, the semiconductor layer, and the insulating layer to en bloc etching, to expose the substrate, and (4) removing the etch mask pattern, and forming source/drain regions in the exposed substrate, whereby providing a simple fabrication process and permitting to minimize an alignment allowance.

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Seoul, South Korea

Hyo Jin Nam