Samsung Electronics Co., Ltd.

Leland Stanford Junior University

Hyo Jin Kim

Ki-Hyun Kim

Friedrich B Prinz

Yongmin Kim

Jinsung Kang

John Provine

Stephen P Walch

Peter Schindler

Youngdong Lee

A method of forming a composite dielectric material can be provided by performing a first deposition cycle to form a first dielectric material and performing a second deposition cycle to form a second dielectric material on the first dielectric material, wherein the first and second dielectric materials comprise different dielectric materials selected from a list consisting of a transition metal nitride, a transition metal oxide, a transition metal carbide, a transition metal silicide, a post-transition metal nitride, a post-transition metal oxide, a post-transition metal carbide, a post-transition metal silicide, a metalloid nitride, a metalloid oxide, and a metalloid carbide.

Semiconductor devices including electrically isolated patterns and method of fabricating the same

Growing community of inventors

Stanford, CA, United States of America

Hyo Jin Kim