Samsung Electronics Co., Ltd.

Hyo-Jeong Kim

Chong-Kwang Chang

Nae-in Lee

Hong-Jae Shin

In-Keun Lee

Seung-Il Bok

Kwang-Hyeon Baik

Oh-Sang Cho

A method of fabricating a semiconductor integrated circuit device, including providing a semiconductor substrate, sequentially forming an etching target layer and a hard mask layer on the semiconductor substrate, forming first etch masks on the hard mask layer, the first etch masks including a plurality of first line patterns spaced apart from one another at a first pitch and extending in a first direction, forming first hard mask patterns by etching the hard mask layer using the first etch masks, forming second etch masks on the first hard mask patterns, the second etch masks including a plurality of second line patterns spaced apart from one another at a second pitch and extending in a second direction different from the first direction, forming second hard mask patterns by etching the first hard mask patterns using the second etch masks, forming spacers on sidewalls of the second hard mask patterns, and patterning the etching target layer using the second hard mask patterns having the spacers.

Method of fabricating semiconductor integrated circuit device

An apparatus for etching an edge of a wafer includes a chamber, a chuck disposed inside the chamber upon which the wafer is disposed, a plate spaced apart from the wafer and disposed above the wafer, and an edge ring formed along the edge of the wafer and combined with an outer periphery of the plate, wherein the edge ring comprises a ring base spaced a distance apart from the wafer to form a parallel plane with respect to the wafer, and a first ring protrusion protruding from the ring base to insulate the edge of the wafer from a central region of the wafer.

Apparatus for etching edge of wafer

Growing community of inventors

Anyang-si, South Korea

Hyo-Jeong Kim