Electronics and Telecommunications Research Institute

Korea Advanced Institute of Science and Technology

Samsung Electronics Co., Ltd.

Hyundai Motor Company

Kia Corporation

Gwangju Institute of Science and Technology

Infomation and Communications University Research and Industrial Cooperation Group

Hyo-Hoon Park

Byueng-Su Yoo

Hye-Yong Chu

Hye Yong Chu

Nam-Hyun Kwon

Min-Soo Park

Hyun-Woo Rhee

Hyeonho Yoon

Geum-Bong Kang

Jong-Hun Kim

Sun-Tae Jung

O-Kyun Kwon

Jong Hun Kim

Young-Tak Han

Kwang-Joon Kim

Han Seo Cho

Han-Seo Cho

Jyung-Chan Lee

Seok-Ho Song

Dong-Su Kim

Mu Hee Cho

Kyung-Sook Hyun

Chan-Hee Kang

Bo-Hun Choi

Byung-Sup Rho

Jong-Bum You

Moo-Jung Chu

Seung-Kwan Kim

Byeoung-Su Yoo

Kyu-Suk Lee

Kyeongjin Han

Hyeon-Ho Yoon

Dong-Eun Yoo

Byeung-Su Yoo

Geumbong Kang

Ju-Beom Lee

Tae Joon Seok

Sung Hwan Hwang

In Ki Kim

An optical phased array (OPA) radiator includes a plurality of unit radiators configured to serve as optical waveguides, each of the unit radiators being made of a silicon material and each having a predetermined length, where the unit radiators are disposed in parallel; a cladding portion configured to cover the plurality of unit radiators; and a plurality of electrodes arranged in parallel with the plurality of unit radiators on the cladding portion, where the plurality of electrodes are arranged so as not to overlap the plurality of unit radiators in a vertical direction. A beam radiated through the unit radiators using a phased array can be efficiently vertically steered.

Optical phased array radiator

Disclosed are an optical phased array chip and a method of manufacturing the same. The optical phased array chip includes a plurality of optical switches and a plurality of optical phased arrays implemented on a single integrated circuit, wherein the single integrated circuit includes a silicon substrate, a lower layer formed on an upper portion of the silicon substrate, a silicon layer formed on an upper portion of the lower layer, a first upper layer, a second upper layer and a third upper layer sequentially arranged on the silicon layer, and an electrode that penetrates through the first upper layer while being grounded to the silicon layer and is formed on an upper portion of the first upper layer.

Optical phased array chip using MEMS switch and manufacturing method thereof

A silicon phased array based LiDAR device that measures a distance using a quasi-frequency modulation is disclosed. A LiDAR device according to an exemplary embodiment of the inventive concept includes a light source that generates an optical signal, an optical modulator that generates a first optical signal having a quasi-frequency whose a modulation frequency constantly varies with time by modulating a light intensity of the optical signal, an optical splitter that splits optical power of the first optical signal into a reference optical signal and a transmit (Tx) optical signal, an optical transmitter that receives and emits the Tx optical signal toward an object, an optical receiver that receives a receive (Rx) optical signal reflected from the object and transfers the Rx optical signal, an optical coupler that mixes the reference optical signal and the Rx optical signal, a balanced photodetector that detects an intermediate frequency from the optical signal transferred from the optical coupler and a distance calculator that obtains distance information by measuring the intermediate frequency.

Silicon-opa-based lidar for measuring distance using quasi-frequency modulation

A waveguide having a bi-directional optical transmission structure comprises: a main waveguide which is formed in a preset direction; a branch waveguide which is connected to at least one of both ends of the main waveguide; and a reflector which is placed at an intersection where the branch waveguide and the at least one of both ends of the main waveguide are connected, and which has a different refraction index from the refraction index of the main waveguide and the refraction index of the branch waveguide, wherein the reflector refracts or reflects in different forms the bidirectional light signals for transmission and reception, and thereby directs the light signal for transmission to the main waveguide, and separates the light signal for reception to the branch waveguide.

Waveguide having bi-directional optical transmission structure

In accordance with the present invention, there is provided an optical path-changing device having one or more curved waveguides, which not only can change an optical path at a large angle close to a perpendicular direction after light or an optical signal has been incident and reflected, but also can change the optical path in various directions, such as for straight pass, left turn, and right turn. An optical path-changing device having one or more curved waveguides according to an embodiment of the present invention includes a first waveguide () formed in a straight line. A second waveguide () is configured to branch from the first waveguide in a first direction and formed in a shape of curved line. A first reflector () is arranged in a region in which the second waveguide branches from the first waveguide.

Optical path-changing device having curved waveguide

A packaging apparatus for optical interconnection on an optical PCB includes a first substrate with a via hole formed therethrough and in which an optical waveguide is formed, an optical interconnection block having a reflective plane on its lower end inserted into the via hole, a second substrate flip-bonded to an upper surface of the first substrate, and an optically active element flip-bonded to a lower surface of the second substrate and aligned for optical communication.

Packaging apparatus for optical interconnection on optical printed circuit board

Disclosed herein is an architecture of connecting a transceiver module for an optical PCB, in which an active photo-electric element and other components to be integrated in the optical PCB having waveguides are packaged, waveguides arranged in the optical PCB, and an optical connection block for optical coupling between the transceiver module and the waveguides of the optical PCB. Guide pin insertion holes are formed at one sides of the ends of the waveguides such that the optical PCB, the transceiver module and the optical connection block can be passively aligned using guide pins inserted into the guide pin insertion holes.

Architecture of connecting optical PCB, transceiver modules for optical PCB and optical connection block

An improved long wavelength-band EDFA (L-band EDFA) is disclosed. The EDFA includes an input terminal for receiving signal light, a pumping unit for pumping a 1,530 nm wavelength band pumping light, a WDM coupler for multiplexing the signal light and the pumping light, and an EDF pumped by a 1,530 nm wavelength band pumping light for amplifying the signal light. Compared with conventional 1,480 nm pumping, the EDFA pumped by 1,530 nm band pumping have about two times higher power conversion efficiency.

L-band erbium-doped fiber amplifier pumped by 1530 nm-band pump

A method of manufacturing a polarization switching surface-emitting laser in which a laser resonance wavelength depends on changing the polarization of the laser, by changing the refractivity of a compound semiconductor mirror layer of the laser depending on polarizations using an electro-optic effect of compound semiconductor materials such as GsAs and applying an electric field thereto.

Polarization switching surface-emitting laser and a method of manufacturing the same

The present invention relates to a semiconductor photoelectric device including a InAs layer formed to monoatomic thickness sandwiched between spacer layers adjacent to an emitter to maximize a difference in energy between two quantum states in accumulation layer of a resonant tunneling diode having a double barrier structure, resulting in separating the resonant tunneling current determined by two quantum states of the triangular well in accumulation layer of resonant tunneling diode, even when light of a low intensity is irradiated to the surface of the resonant tunneling diode. Thus, there is provided an optical controlled resonant tunneling diode, making it possible to manufacturing a switching device for controlling an electric signal using light source by adjusting, using light, the resonant tunneling determined by an excited state of the triangular well.

Optical controlled resonant tunneling diode

A three-dimensional cavity surface emitting laser structure and a fabrication method thereof which are capable of effectively controlling the characteristic of the transverse mode by applying independent electrical field to a side wall of an active region and concentrating a current flow along, inside of the active region. The structure includes a protrusion portion of a bottom mirror region formed on a substrate, an insulation film formed in a sidewall of a laser post having an active region extended from the protrusion and a top mirror region, and a sidewall metal mirror layer electrically separated from n-type and p-type electrodes for independently applying an electric field.

Three-dimensional cavity surface emitting laser structure and

A method for manufacturing a surface-emitting laser array device is disclosed. In order to control the polarization characteristics of the surface-emitting laser, the surface-emitting laser array device according to the present invention can be manufactured by alternately arranging the surface-emitting laser formed by inclining a cavity in the &lt;110&gt; and &lt;110&gt; direction in accordance with the row or the column direction of the surface-emitting laser, so that the polarization characteristics of the surface-emitting laser in two directions which are relatively perpendicular to each other may be obtained. According to the present invention, it has an advantageous effect that the interaction between the adjacent laser beams can be minimized with maintaining the symmetric feature of the lasing beam when manufacturing an integrated surface-emitting laser array device. Further, since the traveling direction of the lasing beam can be controlled depending upon the polarization characteristics, not only the optical interconnection or optical switching can easily be performed, but also the device can effectively be applied to the device, for example, the magneto-optic disk which is sensitive to the polarization characteristics.

Method of manufacturing polarization-controlled surface emitting laser

A method for producing a vertical-cavity surface-emitting laser, includes the steps of: forming a bottom mirror layer, an active layer and a top mirror layer on a semiconductor substrate; forming an antireflection layer on a rear surface of the semiconductor substrate; selectively etching peripheral portions of the antireflection layer to form a first electrode; defining laser emission portions through etching processing; forming a hydrogenated barrier over an entire surface of the resultant structure; forming a post; forming a passivation layer through the hydrogenating of the exposed top mirror layer and the portions of the active layer; forming a planarization film after the partial exposure of the top mirror and forming a second electrode pad to which the exposed top mirror layer contacts.

Method for producing a hydrogenated vertical-cavity surface-emitting

An improved parallel optical logic operator provides a path for light to pass through substrates in which a light source and an optical logic device are arranged. An optical logic device operates by transmission of light forwarded to a predetermined direction. This increases integration efficiency of the system by eliminating optical parts for changing the light path. A unit chip includes a laser array for generating a predetermined light in accordance with an electrical signal for a logic process, a laser array substrate on which via holes are formed for passing light, a microlens array for converting the light beam emitted from each laser device of the laser array into a parallel light beam for passing through the via hole, and an optical logic circuit array formed with a combination of an S-SEED which performs a logic function by transmission of the light signal through an optical window in S-SEED. A plurality of unit chips are laminated so that the light emitted from the laser device of one of the unit chips passes through an optical logic circuit of a corresponding unit chip and can be made incident on the optical logic circuit in the next unit chip through a via hole.

Compact optical logic operator array

A method for non-active processing of an etched surface in a vertical-cavity surface-emitting laser diode is provided. In order to obtain a stable single fundamental transverse mode, at a low temperature of 100 to 300 degrees, an amorphous GaAs is deposited on a surface of an etched active layer and an etched cavity. Also, a bottom emitting laser is provided which is formed by, with the metal electrode as a mask, etching the top mirror layer and the active layer, depositing the amorphous GaAs onto the etched portion and planarizing the deposited GaAs layer and depositing p-type metal pad over the amorphous GaAs around the formed laser device. Also, a top emission type laser is provided which is formed by, with a photoresist as a mask, etching the top mirror layer and the active layer, planarizing the GaAs layer and depositing p-type metal pad containing a window for light emission which is made smaller than laser area over the amorphous GaAs around the formed laser device. Thus, a more stable single fundamental transverse mode than in the conventional device can be obtained.

Method for fabricating a vertical-cavity surface-emitting laser diode

Growing community of inventors

Daejeon, South Korea

Hyo-Hoon Park