Applied Materials, Inc.

Hyman Lam

Mei Yin Chang

Dien-Yeh Wu

Joseph Yudovsky

Paul F Ma

Chien-Teh Kao

Faruk Gungor

David Chu

Bo Zheng

Sang Ho Yu

Salvador P Umotoy

Joseph F AuBuchon

Xiaoxiong Yuan

Michael Sterling Jackson

Hua Ai

Mark S Johnson

Xiaoxiong (John) Yuan

David Santi

Hou Gong Wang

Michael Jackson

Ai Hua

San Ho Yu

Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Apparatus and method for providing uniform flow of gas

Disclosed are apparatus and methods for supplying a constant flow of precursor gas to a processing chamber. The apparatus described, and methods of use, allow a precursor ampoule to be removed from the gas delivery system without interrupting the process.

Processing chamber gas delivery system with hot-swappable ampoule

Described are apparatus and methods for processing semiconductor wafers so that a film can be deposited on the wafer and the film can be UV treated without the need to move the wafer to a separate location for treatment. The apparatus and methods include a window which is isolated from the reactive gases by a flow of an inert gas.

Deposition chambers with UV treatment and methods of use

Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

Apparatuses and methods for atomic layer deposition

Growing community of inventors

San Jose, CA, United States of America

Hyman Lam