Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Samsung Sdi Co., Inc.

Hyeyeon Yang

Shin Ae Jun

Tae Gon Kim

Shang Hyeun Park

Jongmin Lee

Eun Joo Jang

Jooyeon Ahn

Yong Seok Han

Tae Hyung Kim

Deukseok Chung

Nayoun Won

Taekhoon Kim

Mi Hye Lim

Garam Park

Bumjin Lee

Ha Il Kwon

Jonggi Kim

Misun Kim

Hojeong Paek

Taek Hoon Kim

Jinsuop Youn

Hyunjoo Han

Sung Jun Park

Sang Yoon Lee

Hyo Sook Jang

Jeong Il Park

Jong Won Chung

Youngjun Yun

A Ra Jo

Suk Gyu Hahm

Seonmyeong Choi

Hyokeun Park

Sue In Chae

A color conversion panel that includes a color conversion layer including two or more color conversion regions, and optionally, a partition wall defining the regions of the color conversion layer, and a display device including the color conversion panel. The color conversion region includes a first region corresponding to a first pixel, and the first region includes a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide. The Group III-V compound includes indium, phosphorus, and optionally, zinc or gallium, or zinc and gallium, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures further include aluminum and chlorine, and a mole ratio of aluminum to sulfur (Al:S) is less than about 0.15:1, a mole ratio of chlorine to sulfur (Cl:S) is less than about 0.1:1, and a mole ratio of sulfur to selenium (S:Se) is greater than or equal to about 2:1. The luminescent nanostructures don not include cadmium.

Luminescent nanostructure, and color conversion panel and electronic device including the same

A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.

Quantum dot having a phosphorus precursor in a multi-component core

A quantum dot, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes a template including a first semiconductor nanocrystal, a quantum well (e.g., quantum well layer) disposed on the template and a shell disposed on the quantum well, the shell including a second semiconductor nanocrystal, and wherein the quantum dot does not include cadmium, wherein the first semiconductor nanocrystal includes a first zinc chalcogenide, wherein the second semiconductor nanocrystal includes a second zinc chalcogenide, and the quantum well layer includes an alloy semiconductor nanocrystal including indium (In), phosphorus (P), zinc (Zn), and a chalcogen element wherein a bandgap energy of the alloy semiconductor nanocrystal is less than a bandgap energy of the first semiconductor nanocrystal and less than a bandgap energy of the second semiconductor nanocrystal.

Quantum well nanocrystals with quaternary alloy structure for improved light absorption

A photosensitive composition including a quantum dot dispersion, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes an acid group-containing polymer and a plurality of quantum dots dispersed in the acid group-containing polymer, and wherein the acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group or a phosphonic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic group and not having a carboxylic acid group and a phosphonic acid group.

Photosensitive compositions, preparation methods thereof, quantum dot polymer composite prepared therefrom

An ink composition includes a quantum dot; a carboxyl group (&#x2014;COOH)-containing binder polymer; an electrical insulating polymer precursor; a radical initiator; and a liquid vehicle, wherein the liquid vehicle includes a mixture of a first organic compound including a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, or a combination thereof, and a second organic compound including a compound represented by Chemical Formula 3, a compound represented by Chemical Formula 4, or a combination thereof:

Ink compositions, production method thereof, and method of forming quantum dot polymer composite pattern using the same

A cadmium-free quantum dot, a quantum dot-polymer composite including the cadmium-free quantum dot, a display device including the quantum dot-polymer composite, and an electroluminescent device including the cadmium-free quantum dot are disclosed, wherein the cadmium-free quantum dot includes a core including a first semiconductor nanocrystal including indium and phosphorus; a light emitting layer surrounding the core and including a second semiconductor nanocrystal including indium and phosphorus; a first shell disposed between the core and the light emitting layer and including a semiconductor nanocrystal including zinc, and selenium, sulfur, or a combination thereof; and a second shell disposed on the light emitting layer and including a semiconductor nanocrystal including zinc, and selenium, sulfur, or a combination thereof, and wherein the quantum is a single light emitting quantum dot having an emission peak wavelength in a range of about 500 nanometers (nm) to about 550 nm.

Cadmium-free quantum dot, quantum dot-polymer composite, and electronic device including the same

Quantum dots and a composite and a display device including the quantum dots. The quantum dots comprise a semiconductor nanocrystal core comprising indium and phosphorous, and optionally zinc, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dots are configured to exhibit a maximum photoluminescence peak in a green light wavelength region, and in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dots, a ratio A/A, of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0.7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4:(Abs&#x2212;Abs)/Abs=VD

Quantum dots, a composition or composite including the same, and an electronic device including the same

A quantum dot, a production method thereof, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes an alloy semiconductor nanocrystal including indium (In), gallium, zinc (Zn), phosphorus (P), and sulfur (S), and in the quantum dot, a mole ratio of gallium with respect to indium (Ga:In) is greater than or equal to about 0.2:1, a mole ratio of phosphorus with respect to indium (P:In) is greater than or equal to about 0.95:1, the quantum dot does not include cadmium, and in an UV-Vis absorption spectrum of the quantum dot(s), a first absorption peak is present in a range of less than or equal to about 520 nm.

Quantum dots, and composite and display device including the same

A quantum dot, and a quantum dot composite and a device including the same, wherein the quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well layer disposed on the seed and a shell disposed on the quantum well layer, the shell including a second semiconductor nanocrystal, and wherein the quantum dot does not include cadmium, wherein the first semiconductor nanocrystal includes a first zinc chalcogenide, wherein the second semiconductor nanocrystal includes a second zinc chalcogenide, and the quantum well layer includes an alloy semiconductor nanocrystal including indium (In), phosphorus (P), and gallium (Ga), and wherein a bandgap energy of the alloy semiconductor nanocrystal is less than a bandgap energy of the first semiconductor nanocrystal and less than a bandgap energy of the second semiconductor nanocrystal.

Quantum dots, composites, and device including the same

Cadmium-free quantum dots, and composite and display device including the same

A photosensitive resin composition includes (A) a photo-conversion material; (B) a metal-containing compound; (C) a photopolymerizable monomer; (D) a photopolymerization initiator; and (E) a solvent, wherein the metal-containing compound includes a *&#x2014;S-M-S&#x2014;* (M is Zn, Al, Mg, Ca, Sc, Ti, 5 V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Sr, Y, Zr, Nb, Mo, Cd, In, Ba, Au, Hg, or Tl) structure, a complex including a polymer matrix in which a photo-conversion material is dispersed, wherein the polymer matrix includes a *&#x2014;S-M-S&#x2014;* (M is Zn, Al, Mg, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Sr, Y, Zr, Nb, Mo, Cd, In, Ba, Au, Hg, or Tl) structure and an ester linking group, a laminated structure including the complex, and a display device and an electronic device including the laminated structure.

Photosensitive resin composition, complex, laminated structure and display device, and electronic device including the same

A quantum dot, and a composite and a display device including the quantum dot. The quantum dot comprises a semiconductor nanocrystal core comprising indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dot does not comprise cadmium wherein the quantum dot has a maximum photoluminescence peak in a green light wavelength region, and wherein in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot, a ratio A/A, of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0.7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4:()/=VD

An ink composition, including a quantum dot; a metal catalyst; an aromatic halide compound; an ene compound including at least one C&#x2014;H moiety and a carbon-carbon unsaturated bond; and optionally, a metal oxide particle, wherein the metal catalyst is a metal salt, a metal coordination complex, or a combination thereof, wherein the metal catalyst comprises a metal that is palladium, nickel, ruthenium, rhodium, iridium, iron, cobalt, chromium, copper, platinum, silver, gold, or a combination thereof.

Ink compositions and quantum dot polymer composite pattern prepared from the same

A quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In), gallium (Ga), and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein the quantum dot emits green light, wherein in the quantum dot, a mole ratio of gallium with respect to a sum of indium and gallium is less than or equal to about 0.5:1, and wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.

Growing community of inventors

Suwon-si, South Korea

Hyeyeon Yang