Skhynix Inc.

Hyewon Yoon

Seung Hwan Kim

A method for fabricating a semiconductor device includes: forming a stack body by alternately stacking a plurality of semiconductor layers and a plurality of etch stopper layers over a substrate; forming a plurality of steps by etching a first portion of the stack body to stop at the etch stopper layer; forming a slit by etching a second portion of the stack body; replacing the etch stoppers of the steps with sacrificial dielectric layers through the slit; replacing the sacrificial dielectric layers with word lines; and forming contact plugs coupled to the word lines.

Growing community of inventors

Gyeonggi-do, South Korea

Hyewon Yoon