Samsung Display Co., Ltd.

Hyeri Cho

Changho Yi

Seokje Seong

Seongjun Lee

Sungho Kim

Jiseon Lee

Sewan Son

Moosoon Ko

Jeongsoo Lee

Seunghyun Lee

Kiho Bang

Wangwoo Lee

Jinsung An

Minwoo Woo

Yoon-Jong Cho

Kyeongwoo Jang

A display apparatus includes a display area and a non-display area, an inorganic insulating layer, display elements in the display area, an encapsulation layer including a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer between the first inorganic encapsulation layer and the second inorganic encapsulation layer, a dam in the non-display area, and a power supply line on the inorganic insulating layer in the non-display area, and a portion of the power supply line intersects the dam, an edge of the portion of the power supply line is covered by at least one transparent conductive material layer, a portion of the first inorganic encapsulation layer is on the portion of the power supply line covered by the at least one transparent conductive material layer.

Display apparatus and electronic apparatus including the same

A display panel includes a substrate, a first thin film transistor including a first semiconductor layer and a first gate electrode, a data line extending in a first direction, a scan line extending in a second direction, a second thin film transistor electrically connected to the data line and including a second semiconductor layer and a second gate electrode, a third thin film transistor including a third semiconductor layer and a first upper gate electrode arranged on the third semiconductor layer, a node connection line electrically connecting the first thin film transistor and the third thin film transistor, and a shield line located between the data line and the node connection line in a plan view and including the same material as the first upper gate electrode of the third thin film transistor. The first semiconductor layer includes a silicon semiconductor, and the third semiconductor layer includes an oxide semiconductor.

Display panel driven by a thin film transistor including a silicon semiconductor and a thin film transistor including an oxide semiconductor

A display device includes a substrate, a first lower pattern disposed on the substrate, a second lower pattern disposed in a same layer as the first lower pattern and integrally formed with the first lower pattern, an etch stopper disposed on the second lower pattern, a power voltage line disposed on the first lower pattern, and a transfer pattern disposed on the etch stopper, connected to the power voltage line, and contacting the second lower pattern through a contact hole defined through the etch stopper.

Display device including first and second lower patterns and method of manufacturing the same

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Yongin-si, South Korea

Hyeri Cho