Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Hyeonuk Kim

Sehwan Lee

Jinwoo Jeong

Hyun-Seung Song

Jaeseok Yang

Moon Gi Cho

Jaehyeong Sim

Leesup Kim

Jongchan Shin

Yeongjae Choi

Eryung Hwang

Semiconductor devices are provided. A semiconductor device includes a gate structure and an adjacent contact. The semiconductor device includes a connector that is connected to the contact. In some embodiments, the semiconductor device includes a wiring pattern that is connected to the connector. Moreover, in some embodiments, the connector is adjacent a boundary between first and second cells of the semiconductor device.

Semiconductor devices having multi-level metallization structures

A processor-implemented neural network method includes: obtaining, from a memory, data of an input feature map and kernels having a binary-weight, wherein the kernels are to be processed in a layer of a neural network; decomposing each of the kernels into a first type sub-kernel reconstructed with weights of a same sign, and a second type sub-kernel for correcting a difference between a respective kernel, among the kernels, and the first type sub-kernel; performing a convolution operation by using the input feature map and the first type sub-kernels and the second type sub-kernels decomposed from each of the kernels; and obtaining an output feature map by combining results of the convolution operation.

Neural network method and apparatus

A processor-implemented neural network method includes: obtaining, from a memory, data an input feature map and kernels having a binary-weight, wherein the kernels are to be processed in a layer of a neural network; decomposing each of the kernels into a first type sub-kernel reconstructed with weights of a same sign, and a second type sub-kernel for correcting a difference between a respective kernel, among the kernels, and the first type sub-kernel; performing a convolution operation by using the input feature map and the first type sub-kernels and the second type sub-kernels decomposed from each of the kernels; and obtaining an output feature map by combining results of the convolution operation.

Semiconductor devices

A semiconductor device includes a first gate electrode provided in a jumper region of a substrate and extending in a first direction, first source/drain regions provided at both sides of the first gate electrode, and a connecting contact electrically connecting the first gate electrode and the first source/drain regions to each other. The connecting contact includes first sub-contacts disposed at both sides of the first gate electrode and connected to the first source/drain regions, and a second sub-contact extending in a second direction intersecting the first direction. The second sub-contact is connected to the first sub-contacts and is in contact with a top surface of the first gate electrode. In the first direction, each of the first sub-contacts has a first width and the second sub-contact has a second width smaller than the first width.

Semiconductor device and method of manufacturing the same

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Seoul, South Korea

Hyeonuk Kim