Samsung Electronics Co., Ltd.

Hyeongwon Choi

Taehun Kim

Changhee Lee

Jaehun Jung

Hanvit Yang

Suhwan Lim

Nambin Kim

Samki Kim

A semiconductor device includes a lower structure including a semiconductor substrate and circuit devices on the semiconductor substrate; a stack structure including interlayer insulating layers and gate electrodes alternating in a vertical direction; and a channel structure penetrating the stack structure. The channel structure includes a core insulating layer, a channel layer, a gate dielectric layer, and a channel pad. A portion of the channel pad overlaps an uppermost gate electrode among the gate electrodes in a horizontal direction. The channel pad includes a first pad layer and a second pad layer on the first pad layer. The second pad layer includes doped polysilicon that is doped with impurities and having N-type conductivity. The first pad layer includes at least one of an undoped polysilicon region and a doped polysilicon region having N-type conductivity and having an impurity concentration lower than an impurity concentration of the second pad layer.

Semiconductor devices and data storage systems including the same

Growing community of inventors

Suwon-si, South Korea

Hyeongwon Choi